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SSP7200N-VB Product details

Product introduction:

Product Introduction

**SSP7200N-VB** is a high-performance single N-channel MOSFET in a DFN8 (5x6) package, designed for low resistance and high current applications. The device has a VDS of 200V, a VGS of ±20V, a threshold voltage (Vth) of 3V, a low on-resistance of 38mΩ (@VGS=10V), and a rated drain current of 30A, making it suitable for applications requiring high current and low loss. Its innovative Trench technology gives the MOSFET an extremely low on-resistance, further improving its efficiency and thermal stability, and is widely used in high-efficiency power conversion and drive circuits.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 200V 3V 30A 38mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 200V 3V 30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 200V 3V 30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
Parameter Description

| **Parameter** | **Value** | **Description** |
|-------------------------|---------------------------|----------------------------------------------------------|
| **Package Type** | DFN8(5x6) | Compact surface mount package for applications with limited space and high heat dissipation performance. |
| **Configuration** | Single N-channel | Suitable for applications with high current and high performance requirements, providing reliable current control. |
| **Drain-Source Voltage (VDS)** | 200V | Supports medium voltage operation, suitable for low to medium voltage power conversion and control. |
| **Gate-Source Voltage (VGS)** | ±20V | Provides higher gate withstand voltage, enhancing the durability and reliability of the device. |
| **Threshold Voltage (Vth)** | 3V | Low gate turn-on voltage ensures earlier startup, suitable for fast response circuits. |
| **On-resistance (RDS(ON))** | 38mΩ (@VGS=10V) | Low on-resistance significantly reduces power loss and improves conversion efficiency, suitable for high-frequency applications. |
| **Drain current (ID)** | 30A | Can support higher drain current, suitable for high-current drive and power conversion applications. |
| **Technology** | Trench | Using Trench technology, it provides low on-resistance and high-efficiency thermal performance to reduce energy loss. |

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Domain and module applications:

Application Fields and Module Examples

1. **DC-DC Converters**
**SSP7200N-VB** is ideal for efficient DC-DC converters, especially in battery-powered and power management systems. Low on-resistance and high current handling capability enable it to provide higher efficiency in a smaller size, especially suitable for applications requiring high-frequency switching, such as portable devices and embedded systems.

2. **Battery Management Systems (BMS)**
In battery management systems, SSP7200N-VB is used as a switching element for efficient battery charge and discharge control. Due to its low on-resistance and high current capability, it can effectively reduce energy loss and extend the service life of the battery.

3. **Motor Control**
This MOSFET is also suitable for motor drive applications, playing a role in power tools, household appliances, and industrial robots. Its low on-resistance ensures current transfer efficiency, reduces heat generation, and improves system operation stability.

4. **Power Amplifiers and Audio Equipment**
In power amplifiers and high-efficiency audio equipment, the device can be used as a switching element to handle higher currents and voltages, providing clearer sound quality and higher power output.

5. **Automotive Power Systems**
In automotive electronics, especially in automotive battery management and power conversion modules, the SSP7200N-VB is used for efficient power conversion, ensuring stable power supply and reducing energy loss, supporting battery management and drive systems for electric and hybrid vehicles.

With its high-performance switching characteristics, low on-resistance and high current capability, this MOSFET can provide excellent energy efficiency and thermal management in a variety of applications, meeting the requirements of high power density and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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