Product introduction:
Product Introduction
**SSM6N7002BFE-VB** is a dual N-Channel MOSFET in SC75-6 package, using Trench technology, with a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) range of 20V. Its maximum drain current (ID) is 0.3A, and it has a high on-resistance (RDS(ON)), which is 1500mΩ at VGS = 4.5V and 1200mΩ at VGS = 10V. The threshold voltage (Vth) of this MOSFET is 1.7V, which is suitable for low-power, low-current switching applications. This device can be widely used in consumer electronics, power management and switching power supply modules that require small packages and high-efficiency current control.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC75-6 |
Dual-N+N |
60V |
|
1.7V |
0.3A |
|
|
1200mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC75-6 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SC75-6 |
Dual-N+N |
60V |
|
1.7V |
0.3A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SC75-6 |
Dual-N+N |
60V |
|
1.7V |
0.3A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC75-6 |
Dual-N+N |
|
|
|
|
|
|
|
Detailed parameter description
| Parameter| Description|
|---------------------|-------------------------------------------|
| **Model** | SSM6N7002BFE-VB |
| **Package type** | SC75-6 |
| **Configuration** | Dual N-Channel |
| **Drain-source voltage (VDS)** | 60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 1500mΩ @ VGS = 4.5V, 1200mΩ @ VGS = 10V |
| **Maximum drain current (ID)** | 0.3A |
| **Technology** | Trench |
| **Operating temperature range** | -55°C to +150°C |
Domain and module applications:
Applications and module examples
1. **Power Management Systems**
The SSM6N7002BFE-VB is suitable for switching circuits in power management modules, especially low-power, low-current applications. The higher on-resistance of this MOSFET is suitable for applications with non-high current requirements, such as low-power regulators, regulators, and low-power power modules. Its SC75-6 package is ideal for power management systems that require space saving in compact electronic devices.
2. **Consumer Electronics**
In consumer electronics, the SSM6N7002BFE-VB can be used as a load switch or power management switch, especially for applications that require low-current power control, such as smart home devices, portable electronics, etc. Due to its small package and low power consumption, it can efficiently manage the power supply of electronic devices, extend the battery life of the device, and provide stable operation.
3. **Low Power Switching Power Supplies**
This MOSFET is suitable for low power switching power supplies, especially in designs that require high efficiency and small footprint. With its low threshold voltage and on-resistance, the SSM6N7002BFE-VB ensures efficient power conversion and has low power loss under high-frequency switching operation, and is widely used in battery-driven power conversion equipment.
4. **Battery-Powered Devices**
The SSM6N7002BFE-VB is suitable for battery-powered devices, especially those that require low current and low power consumption. In such applications, the low threshold voltage and efficient switching performance of the MOSFET can significantly reduce battery consumption and extend the use time of the device. It is very suitable for wireless sensors, battery-powered small transmission modules, and portable devices.
5. **Low Power Sensor Modules**
In low power sensor modules, the SSM6N7002BFE-VB can be used for current switching to control the power connection between the sensor and the microcontroller. The small package and low power consumption of MOSFET make it an ideal choice for sensor modules, environmental monitoring and health equipment. Due to its higher on-resistance, it is particularly suitable for low-power sensor applications that do not require high current.
6. **Low Current Power Switching**
The SSM6N7002BFE-VB also performs well in low current power switching and is suitable for circuits that require stable switching but small currents, such as micro devices, battery management and low power modules. This MOSFET provides high efficiency when switching and is able to reduce power loss, ensuring low temperature operation and high efficiency of the device when working.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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