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SSM6N35FU-VB Product details

Product introduction:

Product Introduction: SSM6N35FU-VB MOSFET

SSM6N35FU-VB is a dual N-channel MOSFET in SC70-6 package, designed for low voltage and medium power switching applications. This model provides two N-channel MOSFETs with a maximum gate-source voltage (VGS) of ±12V and a maximum drain-source voltage (VDS) of 20V. This MOSFET uses Trench technology and has a low on-resistance (RDS(ON)), ensuring efficient current transmission at low voltage and reducing power loss. Its on-resistance is 110mΩ (VGS=2.5V) and 86mΩ (VGS=4.5V), respectively, and the maximum drain current (ID) is 2.6A, which is suitable for low-power, low-voltage load control and current switching applications. SSM6N35FU-VB has a wide range of applications in electronic products, especially in power management and load switching circuits that require dual N-channel MOSFETs and require efficient current control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC70-6 Dual-N+N 20V 0.5~1.5V 2.6A 110mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC70-6 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SC70-6 Dual-N+N 20V 0.5~1.5V 2.6A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SC70-6 Dual-N+N 20V 0.5~1.5V 2.6A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC70-6 Dual-N+N
Detailed parameter description:

- **Model**: SSM6N35FU-VB
- **Package**: SC70-6
- **Configuration**: Dual N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 110mΩ @ VGS = 2.5V
- 86mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 2.6A
- **Technology**: Trench

Domain and module applications:

Applications and modules

1. **Low-power power switch circuit**
Due to its low on-resistance and efficient switching performance, the SSM6N35FU-VB is ideal for low-power power switch circuits. In particular, this MOSFET can be used for efficient current switching and power management in devices such as DC-DC converters, battery management, and battery chargers. Two N-channel MOSFETs allow flexible current control in small power modules, helping to improve overall power conversion efficiency.

2. **Load switch circuit**
The dual N-channel MOSFET design makes the SSM6N35FU-VB particularly suitable for load switch circuits. It can be used as a load control switch to support efficient switching of current, and is suitable for use in situations where switch control is required, such as home appliances, smart devices, LED drivers, and communication equipment. N-channel MOSFETs have a lower on-resistance, which helps reduce power loss and improve the overall energy efficiency of the system.

3. **Battery protection circuit**
SSM6N35FU-VB is also very suitable for battery protection circuits, especially in portable electronics and power tools. The dual N-channel design can help the battery management system flexibly adjust the battery's charge and discharge status. In the battery overcharge, over-discharge or short-circuit protection circuit, this MOSFET effectively protects the battery from damage by providing precise current switching function.

4. **LED drive circuit**
In the LED drive circuit, SSM6N35FU-VB can provide reliable current control and voltage conversion. Due to its low on-resistance, it is suitable for efficiently driving low-power and medium-power LEDs. In terms of current regulation and voltage stability, MOSFET can improve the working efficiency and life of LED lamps through precise switching control.

5. **Small electric devices**
For electric devices that require miniaturization and more precise power control, the low on-resistance and high current carrying capacity of the SSM6N35FU-VB make it very suitable for drive control circuits in power tools, toys, and other portable devices. Through precise MOSFET switching control, the response speed and battery efficiency of the device can be effectively improved.

6. **Smart home and sensors**
In smart home devices and sensor modules, the SSM6N35FU-VB can be used to control power output and switch power. For example, smart sockets, sensor modules, wireless power supply systems, etc., all require efficient MOSFETs to perform precise current switching. Due to its small package and low power consumption, this MOSFET is very suitable for such applications.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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