Featured Model

Your present location > Home page > Featured Model

SSM6N29TU-VB Product details

Product introduction:

Product Introduction

**SSM6N29TU-VB** is a dual N-Channel MOSFET using Trench technology, packaged in SC70-6, designed for low-voltage, high-efficiency switching applications. Its drain-source voltage (VDS) is 20V and its gate-source voltage (VGS) is ±12V, making it suitable for use in low-power, space-constrained electronic devices. This MOSFET has a low on-resistance (RDS(ON)), and when VGS = 4.5V, RDS(ON) is as low as 86mΩ, which can ensure low power loss during switching. Its threshold voltage (Vth) ranges from 0.5V to 1.5V, and it can switch accurately at lower voltages, making it ideal for electronic products and modules that require low-voltage control.

File download

Download PDF document
Download now

VBsemi online shopping mall:

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC70-6 Dual-N+N 20V 0.5~1.5V 2.6A 110mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC70-6 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SC70-6 Dual-N+N 20V 0.5~1.5V 2.6A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SC70-6 Dual-N+N 20V 0.5~1.5V 2.6A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC70-6 Dual-N+N
Detailed parameter description

| Parameter| Description|
|---------------------|-------------------------------------------|
| **Model** | SSM6N29TU-VB |
| **Package type** | SC70-6 |
| **Configuration** | Dual N-Channel |
| **Drain-source voltage (VDS)** | 20V |
| **Gate-source voltage (VGS)** | ±12V |
| **Threshold voltage (Vth)** | 0.5V ~ 1.5V |
| **On-resistance (RDS(ON))** | 110mΩ @ VGS = 2.5V, 86mΩ @ VGS = 4.5V |
| **Maximum drain current (ID)** | 2.6A |
| **Technology** | Trench |
| **Operating temperature range** | -55°C to +150°C |

Domain and module applications:

Applications and module examples

1. **Battery Management Systems**
In battery management systems, SSM6N29TU-VB can effectively control the flow of current, especially in mobile power supplies and portable devices. Its low on-resistance minimizes energy loss during battery charging and discharging, helping to extend battery life and improve power efficiency. MOSFET acts as a switch in these applications, controlling the current transfer between the battery and the load.

2. **Load Switching**
SSM6N29TU-VB is suitable for load switching applications, especially for load switching of low-power devices. This MOSFET can provide a good balance between efficient current switching and fast response, and is widely used in small electronic devices, sensor modules and other fields to ensure low current loss and stable operation.

3. **DC-DC Converters**
In DC-DC converters, SSM6N29TU-VB can be used as the main switching element. Due to its low on-resistance and good switching characteristics, this MOSFET can improve conversion efficiency and reduce heat loss, and is suitable for use in buck-boost converters that require low voltage operation. It is particularly suitable for power conversion modules that require high efficiency, such as portable devices and battery-driven applications.

4. **Power Management Modules**
SSM6N29TU-VB is suitable for switch control in power management systems. Its low on-resistance and high switching speed enable it to efficiently control current flow in power modules and reduce power losses. In the management of multi-power systems and multi-channel power rails, this MOSFET can provide precise current switching to ensure circuit stability and high efficiency.

5. **Consumer Electronics**
In consumer electronics, such as smartphones, wearable devices, Bluetooth headsets, etc., SSM6N29TU-VB provides an efficient and compact solution. Its small SC70-6 package makes it ideal for space-constrained applications, and its low on-resistance and flexible threshold voltage range ensure stable operation of the device in a low-power state, improving battery life.

6. **Communication Devices**
In wireless communication devices, the SSM6N29TU-VB can be used as a switching element to effectively control current during signal modulation and demodulation. It can provide low-power, high-efficiency switching operations for communication circuits, and is particularly suitable for miniaturized RF circuits, mobile communication modules and other fields.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

Shopping

Topping

Sample Req
Online
Telephone
WeChat