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SSM6K32TU-VB Product details

Product introduction:

Product Introduction: SSM6K32TU-VB MOSFET

SSM6K32TU-VB is a single N-channel MOSFET in SC70-6 package with efficient current control and excellent switching characteristics. The maximum drain-source voltage (VDS) of this MOSFET is 60V, which is suitable for low-voltage to medium-voltage power switching, load control and battery protection applications. It has a low on-resistance (RDS(ON)), which is 90mΩ (VGS = 4.5V) and 75mΩ (VGS = 10V), respectively, to ensure that less power loss can be provided during the switching process. The maximum drain current (ID) is 2.5A, and it has good thermal stability, which is suitable for use at higher frequencies and smaller package spaces. SSM6K32TU-VB uses Trench technology, which gives it excellent performance in power management, load control and other fields, and is widely used in low-power devices.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC70-6 Single-N 60V 1.7V 2.5A 75mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC70-6 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SC70-6 Single-N 60V 1.7V 2.5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SC70-6 Single-N 60V 1.7V 2.5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC70-6 Single-N
Detailed parameter description:

- **Model**: SSM6K32TU-VB
- **Package**: SC70-6
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 90mΩ @ VGS = 4.5V
- 75mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 2.5A
- **Technology**: Trench

Domain and module applications:

Applications and modules

1. **Power management and power converters**
The low on-resistance and excellent switching characteristics of the SSM6K32TU-VB make it suitable for power management systems, especially in battery-powered devices, where it can efficiently convert electrical energy. For example, this MOSFET is often used as a switching element in DC-DC converters and boost/buck converters to improve system conversion efficiency and reduce power consumption.

2. **Load switch circuits**
In low-power devices, the SSM6K32TU-VB is widely used in load switch circuits. Its low RDS(ON) ensures minimal losses when powered, thereby increasing the battery life. Typical applications include smart homes, sensor modules, microelectronic devices, etc.

3. **Battery protection circuits**
This MOSFET is suitable for battery protection circuits, which can effectively manage the battery charging and discharging process to avoid overcurrent, overcharging, etc. Its efficient switching characteristics are crucial in battery protection design, ensuring safe and efficient battery operation, especially for portable devices and battery-powered systems.

4. **LED drive circuit**
SSM6K32TU-VB can be used as a switching element in the LED drive circuit to help adjust the operating current of the LED lamp, thereby achieving brightness adjustment and protection. Its low RDS(ON) characteristics enable it to effectively manage power loss, thereby improving the efficiency and reliability of the entire LED drive system.

5. **Consumer electronics**
In smartphones, tablets, and portable electronic devices, the low power consumption characteristics of SSM6K32TU-VB make it very suitable for power switches and battery management circuits. Its compact SC70-6 package enables it to adapt to space-constrained design requirements and is widely used in mobile phone charging, mobile power supplies, wearable devices and other occasions.

6. **Intelligent hardware and sensor interface circuits**
For intelligent hardware, sensors and wireless communication devices, SSM6K32TU-VB provides stable power supply and efficient load switching function. In some low-power sensor interface circuits, precise current control can be achieved through this MOSFET to ensure the stability and performance of hardware devices.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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