Product introduction：
SSM3K04FU-VB MOSFET Product Introduction
SSM3K04FU-VB is a unipolar N-channel MOSFET in SC70-3 package, designed for low voltage, high efficiency switching applications, suitable for circuits that require small size and high switching frequency. The maximum drain-source voltage (V_DS) of this MOSFET is 20V, and the gate-source voltage (V_GS) is ±12V, which is suitable for high-frequency switching control in low voltage environments. The threshold voltage (V_th) ranges from 0.5V to 1.5V, which means that the MOSFET can be turned on at a lower gate-source voltage, enabling high-efficiency switching under low power conditions. The on-resistance (R_DS(ON)) under different V_GS conditions is:
- 48mΩ @ V_GS = 2.5V
- 40mΩ @ V_GS = 4.5V
- 36mΩ @ V_GS = 10V
The maximum drain current (I_D) is 4A. This MOSFET adopts Trench technology, with low on-resistance and high switching speed, suitable for low-power power management, load control and current switching applications, especially for circuit designs with limited space and high efficiency.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-3 |
Single-N |
20V |
|
0.5~1.5V |
4A |
48mΩ |
|
36mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-3 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC70-3 |
Single-N |
20V |
|
0.5~1.5V |
4A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC70-3 |
Single-N |
20V |
|
0.5~1.5V |
4A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-3 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: SSM3K04FU-VB
- **Package**: SC70-3
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (V_DS)**: 20V
- **Maximum gate-source voltage (V_GS)**: ±12V
- **Threshold voltage (V_th)**: 0.5V to 1.5V
- **On-resistance (R_DS(ON))**:
- 48mΩ @ V_GS = 2.5V
- 40mΩ @ V_GS = 4.5V
- 36mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 4A
- **Technology**: Trench
- **Maximum power consumption**: The specific power consumption depends on the application and heat dissipation conditions, and is suitable for low-power applications.
The SSM3K04FU-VB MOSFET provides low on-resistance and low threshold voltage, and exhibits excellent switching performance in low-voltage and low-power applications. Its Trench technology helps improve conduction efficiency and reduce power consumption, and is suitable for power management systems that require fast response and high efficiency.
Domain and module applications：
Application fields and module examples
The high efficiency, small package and fast switching characteristics of SSM3K04FU-VB MOSFET make it very suitable for multiple low-power, high-frequency switching applications. Here are several typical application fields and modules:
1. **Portable device power management**:
- Due to its small package (SC70-3 package) and low on-resistance, SSM3K04FU-VB is particularly suitable for power management systems of portable electronic devices such as smartphones, tablets, wearable devices, etc. It can provide efficient power switching solutions in battery management, charging circuits and current regulation modules to extend battery life and optimize energy efficiency.
2. **Wireless devices and sensors**:
- SSM3K04FU-VB is suitable for low-power wireless devices such as Internet of Things (IoT) devices, smart home sensors, wireless communication modules, etc. It can switch quickly and efficiently control power, suitable for low-current power switching and load control, meeting the power efficiency and small size requirements of these small, low-power devices.
3. **DC-DC Converter**:
- In DC-DC converter modules, SSM3K04FU-VB has very high efficiency as a switching element, especially suitable for low voltage and low current conversion applications. Its low on-resistance and fast switching characteristics make it very suitable for efficient voltage conversion and current regulation, especially in mobile power supplies, chargers and low-power power modules.
4. **LED Drive Circuit**:
- In LED drive circuits, SSM3K04FU-VB can be used for current regulation and power switching to ensure constant current supply to drive LEDs. Due to its low on-resistance, it helps improve power efficiency, reduce power loss, ensure stable brightness and long service life of LEDs, and is widely used in small LED lighting systems.
5. **Battery Management System (BMS)**:
- In battery management systems (BMS), SSM3K04FU-VB can be used for battery charge and discharge control, battery balancing and protection circuits. Due to its low on-resistance and small package, it can effectively manage the current flow of the battery, protect the battery from overcurrent or overvoltage damage, and optimize the battery charging and discharging efficiency.
6. **Smart Home and Automation Equipment**:
- The SSM3K04FU-VB can also be used for power control, load switching, and overvoltage protection functions in smart home and automation equipment. Due to its fast response and low power consumption, it can help control the power of various home devices, such as lighting adjustment, curtain control, and temperature control systems.
7. **Power Tools and Small Motor Control**:
- In small power tools, electric toys, and low-power motor control systems, the SSM3K04FU-VB can be used for motor drive and load control. Its small package and high performance make it an ideal choice for small motor applications such as power tools and electric toys.
In summary, the SSM3K04FU-VB MOSFET is very suitable for applications in portable devices, battery-powered systems, LED drivers, wireless sensors, power management, smart homes, and power tools due to its low voltage, low power consumption, high-efficiency switching, and small package characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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