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SSM3J130TU-VB Product details

Product introduction:

1. Product Introduction

**SSM3J130TU-VB** is a unipolar P-type MOSFET in **SC70-3** package, suitable for low voltage switching applications. This MOSFET has a **-20V** drain-source voltage (VDS), can withstand a higher **gate-source voltage** (VGS) of up to **±12V**, and has a low **on-resistance** (RDS(ON)), which are **100mΩ** (VGS=2.5V) and **80mΩ** (VGS=4.5V), respectively, which makes it perform well in the current switching process. Its maximum drain current (ID) is **-3.1A**, which is suitable for low power consumption, high frequency switching and load switching applications. This MOSFET adopts **Trench** technology, has low switching losses and good electrical performance, and is widely used in portable devices, LED drivers, battery management, load switches and other fields, especially suitable for high-efficiency, low-voltage and miniaturized electronic designs.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC70-3 Single-P -20V -0.6V -3.1A 100mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC70-3 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SC70-3 Single-P -20V -0.6V -3.1A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SC70-3 Single-P -20V -0.6V -3.1A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC70-3 Single-P
2. Detailed parameter description

- **Package type**: SC70-3
- **Configuration**: Unipolar P-type MOSFET
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ (VGS=2.5V)
- 80mΩ (VGS=4.5V)
- **Maximum leakage current (ID)**: -3.1A
- **Technology process**: Trench
- **Maximum power dissipation (Pd)**: Moderate, depending on heat dissipation conditions
- **Operating temperature range**: -55°C to +150°C
- **Gate charge (Qg)**: Moderate, suitable for medium to high frequency switching applications
- **Drain current (IDSS)**: Low
- **Switching speed**: Moderate, suitable for low to medium frequency applications

Domain and module applications:

3. Application fields and module examples

1. **Low voltage power switch**:
**SSM3J130TU-VB** performs well in low voltage power management systems, especially for DC-DC converters and power path switches. Its low on-resistance enables efficient current switching capabilities under low voltage conditions, and is widely used in low-power designs such as mobile devices, portable power supplies, and battery management systems. Since this MOSFET can operate at a lower gate-source voltage, it is very suitable for battery management modules in mobile devices to ensure efficient power conversion and long battery life.

2. **Battery Management System (BMS)**:
In the battery management system, SSM3J130TU-VB acts as a battery protection switch, which can effectively manage the battery charging and discharging process to ensure safe and efficient use of the battery. This MOSFET has a low RDS(ON) that reduces power loss, making it particularly suitable for efficient battery charging and discharging control. It is commonly used in battery management of smartphones, laptops, portable electronic devices, and power tools.

3. **LED driver power supply**:
In the LED driver power supply system, SSM3J130TU-VB as a switching element can efficiently control the LED current and reduce the power loss in the system through its low on-resistance. It can ensure the stable operation of the LED driver and is suitable for low-voltage, high-frequency LED lighting products such as LED light strips, indoor lighting systems and automotive LED lighting.

4. **Load switch application**:
This MOSFET is widely used in low-power load switch applications and is suitable for signal processing, circuit protection and switching control of small power equipment. Due to its small package and efficient current switching characteristics, SSM3J130TU-VB is particularly suitable for smart home, sensor modules, low-power transmission equipment and other fields.

5. **Smart home and wearable devices**:
In smart home, wearable devices and other low-power consumer electronics products, SSM3J130TU-VB is widely used in power management and switching circuits. Its high-efficiency switching capability and low power consumption make it an ideal choice for small electronic devices such as smart watches, health monitoring devices, wireless headphones, etc.

In summary, **SSM3J130TU-VB** is a high-efficiency P-type MOSFET suitable for low-voltage applications, which is widely used in portable devices, battery management, LED driving, power switches, load switches, etc. Its low on-resistance, moderate switching performance and compact packaging make it have broad application prospects in the fields of efficient power management, smart home and wearable devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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