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SSM3J112TU-VB Product details

Product introduction:

SSM3J112TU-VB Product Introduction

The SSM3J112TU-VB is a single P-channel MOSFET in an SC70-3 package, designed for low-voltage, high-efficiency applications. With a maximum drain-source voltage (V_DS) of -20V and a gate-source voltage (V_GS) of ±12V, this MOSFET is suitable for power management and switching applications that require precise current control. The SSM3J112TU-VB has a low on-resistance (R_DS(ON)) of 80mΩ at V_GS = 4.5V and 100mΩ at V_GS = 2.5V, which enables it to significantly reduce power losses during low-voltage operation. This device uses Trench technology, which has higher switching speeds and lower switching losses, making it ideal for use in battery-powered devices, load switches, power management, and other fields with space constraints and low power requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC70-3 Single-P -20V -0.6V -3.1A 100mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC70-3 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SC70-3 Single-P -20V -0.6V -3.1A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SC70-3 Single-P -20V -0.6V -3.1A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC70-3 Single-P
Detailed parameter description

- **Package type**: SC70-3
- **Configuration**: Single P channel
- **Drain-source voltage (V_DS)**: -20V
- **Gate-source voltage (V_GS)**: ±12V
- **Threshold voltage (V_th)**: -0.6V
- **On-resistance (R_DS(ON))**:
- 100mΩ @V_GS = 2.5V
- 80mΩ @V_GS = 4.5V
- **Maximum drain current (I_D)**: -3.1A
- **Technology**: Trench

Domain and module applications:

Applications and module examples

1. **Portable device power management**:
The SSM3J112TU-VB is suitable for space-constrained applications, especially in portable electronic devices such as smartphones, tablets and wearable devices, due to its small SC70-3 package. MOSFETs are used in power management systems to control current flow, regulate voltage and optimize battery efficiency, thereby increasing the battery life of the device.

2. **Load switch circuit**:
This MOSFET is suitable for load switch circuits, especially in low-voltage, current-limited applications. Through its low on-resistance, the SSM3J112TU-VB can reduce power loss when switching, and is widely used in portable battery-powered systems, LED driver circuits, and low-power power modules.

3. **Battery management and protection circuit**:
In battery management systems, the SSM3J112TU-VB can be used in battery protection circuits to control the flow of current in and out to avoid overcharging, over-discharging or overcurrent. Its low threshold voltage (-0.6V) ensures normal operation at a lower gate-source voltage, making it suitable for small devices and battery charging/protection systems.

4. **Smart Home and Sensor Modules**:
SSM3J112TU-VB is widely used in smart homes, Internet of Things (IoT) devices and sensor modules. These devices usually require low power consumption, efficient switching control, and are often space-limited. The small package size and efficient switching performance of MOSFET make it an ideal choice for smart home devices, environmental monitoring sensors and low-power control systems.

5. **Low-power wireless communication devices**:
In low-power wireless communication devices (such as wireless sensors, Bluetooth devices, etc.), SSM3J112TU-VB acts as a load switch and current regulator to improve the operating efficiency of the device and reduce energy consumption. Its efficient switching performance ensures more efficient power management in wireless communication systems and extends the battery life of the device.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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