Product introduction：
Product Introduction: SSF7400-VB
SSF7400-VB is an N-Channel MOSFET in SC70-3 package with 20V drain-source voltage (V_DS) and maximum drain current (I_D) of 4A. The on-resistance (R_DS(ON)) of this MOSFET varies with the gate-source voltage (V_GS), which is 48mΩ (V_GS = 2.5V), 40mΩ (V_GS = 4.5V) and 36mΩ (V_GS = 10V). SSF7400-VB uses Trench technology, which provides low on-resistance and high switching performance, and is suitable for use in low-voltage and high-efficiency electronic systems. The threshold voltage (V_th) of this MOSFET ranges from 0.5V to 1.5V, which enables it to start conducting at low gate-source voltages, making it suitable for low-power electronic devices and high-efficiency power management applications.
Due to its small SC70-3 package, the SSF7400-VB is particularly suitable for space-constrained applications, providing efficient current switching without taking up too much board area. Its low on-resistance enables it to provide efficient switching and energy conversion in low-power and low-voltage systems, suitable for use in mobile phones, wearable devices, battery management and other compact electronic modules.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-3 |
Single-N |
20V |
|
0.5~1.5V |
4A |
48mΩ |
|
36mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-3 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC70-3 |
Single-N |
20V |
|
0.5~1.5V |
4A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC70-3 |
Single-N |
20V |
|
0.5~1.5V |
4A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-3 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description:
- **Model**: SSF7400-VB
- **Package type**: SC70-3
- **Configuration**: Single-N-Channel
- **Drain-source voltage (V_DS)**: 20V
- **Gate-source voltage (V_GS)**: ±12V
- **Threshold voltage (V_th)**: 0.5V ~ 1.5V
- **On-resistance (R_DS(ON)）**:
- 48mΩ @ V_GS = 2.5V
- 40mΩ @ V_GS = 4.5V
- 36mΩ @ V_GS = 10V
- **Drain current (I_D)**: 4A
- **Technology**: Trench
- **Maximum power dissipation (P_D)**: Maximum power dissipation depends on the heat dissipation conditions, the typical value is 0.5W (the specific value needs to be calculated according to the application environment and cooling method)
- **Operating temperature range**: -55°C to +150°C
- **Gate-source capacitance (C_gs)**: ≈20pF (typical value)
- **Drain-source capacitance (C_ds)**: ≈30pF (typical value)
Domain and module applications：
Applications and modules:
1. **Portable device power management**
Due to its low on-resistance and small package, the SSF7400-VB is ideal for power management modules in portable devices such as smartphones, tablets, and wearable devices. It can provide efficient switching control in the power switch, load switching, and battery charging circuits of these devices, extending battery life and reducing energy loss.
2. **Battery Management System (BMS)**
The SSF7400-VB can be widely used in battery management systems, especially for switch control in low-voltage applications such as charging and protection circuits for portable electronic devices and power tools. Its low on-resistance and low threshold voltage enable it to provide high efficiency in battery charging and battery protection circuits.
3. **Battery Protection and Load Switching**
This MOSFET has a wide range of applications in battery protection circuits, especially as a load switch in rechargeable devices. Its high switching speed and low on-resistance help to effectively switch battery power, ensure battery safety, and improve the operating efficiency of the device.
4. **Low-voltage drive circuits**
Due to its low threshold voltage (V_th), the SSF7400-VB is suitable for low-voltage drive switch circuits and can operate stably in the range of 0.5V to 1.5V. This makes it important in low-power applications such as low-voltage signal processing circuits, sensor modules, and power management of low-power microcontrollers.
5. **Automotive electronics**
SSF7400-VB is also suitable for low-voltage control systems in automotive electronics. For example, in battery management and on-board power supply systems of electric vehicles, it can be used as a low-voltage protection circuit, load switching, and battery current control.
6. **Sensor and control circuits**
In various sensor modules, the SSF7400-VB can be used as a signal switch and control switch, especially those sensors and control circuits that require low voltage and high efficiency. In applications such as wireless sensor networks and IoT devices, this MOSFET has the advantages of low switching losses and small packages.
7. **Signal Switch**
Due to its low gate-source drive voltage and small size, SSF7400-VB can be used as a signal switch in low-power circuits, especially for digital signal switching applications that require fast response and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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