Product introduction：
Product Introduction
SS218-VB is a high-efficiency N-channel MOSFET in SOP8 package, designed for medium and low voltage applications, providing excellent switching performance and low power loss. The maximum drain-source voltage (VDS) of this MOSFET is 30V, and the gate-source voltage (VGS) is ±20V, which can start at a lower gate voltage. Its gate voltage threshold (Vth) is 1.7V, ensuring fast response. The on-resistance (RDS(ON)) of SS218-VB is very low, 11mΩ at VGS=4.5V and 8mΩ at VGS=10V, which can maintain low power loss at high current (ID=13A). Using Trench technology, this MOSFET optimizes the on-resistance and switching performance, and is suitable for a variety of power electronics applications requiring high efficiency and low energy loss.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package**: SOP8
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate voltage threshold)**: 1.7V
- **RDS(ON)**:
- 11mΩ（VGS=4.5V）
- 8mΩ（VGS=10V）
- **ID (maximum drain current)**: 13A
- **Technology**: Trench technology, optimizing on-resistance and switching speed
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
Application fields and modules
SS218-VB is suitable for multiple power management and power switching applications due to its low on-resistance and high current carrying capacity, especially in low to medium voltage ranges. Here are a few application fields and modules for this MOSFET:
- **DC-DC converter**: This MOSFET is very suitable for **DC-DC converter**, especially low to medium voltage conversion applications. Due to its low RDS(ON), SS218-VB can reduce energy loss and improve conversion efficiency, making it very suitable for **mobile power**, **portable devices** and **computer power management**.
- **Power management system**: SS218-VB is widely used in **battery management systems** (BMS), **battery chargers** and **power regulators**. Its low on-resistance and high current capability make it an efficient power switch in battery-powered devices, which can effectively control current and voltage to ensure high efficiency during battery charging and discharging.
- **Consumer Electronics**: In consumer electronics such as **smartphones**, **tablets**, **smart home devices**, the SS218-VB can be used in power management modules to help devices improve energy efficiency and extend usage time. Its small package (SOP8) is ideal for designs with limited space.
- **LED Drivers**: The SS218-VB is also widely used in **LED drivers**, especially in applications where efficient current control is required. Low RDS(ON) can significantly reduce energy losses in LED drivers and provide stable current output.
- **Industrial Power Systems**: In industrial control systems and power conversion systems, the SS218-VB is suitable for power switches and power conditioning modules. The MOSFET can handle higher currents and is suitable for applications such as **industrial motor drives**, **inverters**, and **power amplifiers**.
- **Electric Vehicles**: In **electric vehicles** and **hybrid vehicles**, the SS218-VB is used in **battery management systems** and motor control systems. This MOSFET can provide efficient power switching, help reduce the energy loss of the system, and improve the endurance of electric vehicles.
In summary, SS218-VB is a high-performance, low-power-loss N-channel MOSFET. With its excellent conduction performance and compact package, it is widely used in power management, power conversion, industrial automation, consumer electronics and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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