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SS131-VB Product details

Product introduction:

Product Introduction
SS131-VB is a high-efficiency P-channel MOSFET in SOP8 package, designed for low voltage and high efficiency applications. With a drain-source voltage (VDS) of -20V and a gate-source voltage (VGS) of ±20V, this MOSFET is suitable for low voltage power switches and control circuits. Its gate voltage threshold (Vth) is -0.6V, which can be turned on at a lower gate voltage and has fast switching characteristics. The on-resistance (RDS(ON)) of this MOSFET is 21mΩ at VGS=2.5V and 15mΩ at VGS=4.5V, which enables it to maintain low energy loss when subjected to maximum leakage current (ID=-13A). Its Trench technology optimizes on-resistance and switching speed, making it an ideal choice for low power, high efficiency applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-P -20V -0.6V -13A 21mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-P -20V -0.6V -13A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-P -20V -0.6V -13A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-P
Detailed parameter description
- **Package**: SOP8
- **Configuration**: Unipolar P-channel
- **VDS (drain-source voltage)**: -20V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate voltage threshold)**: -0.6V
- **RDS(ON)**:
- 21mΩ(VGS=2.5V)
- 15mΩ(VGS=4.5V)
- **ID (maximum drain current)**: -13A
- **Technology**: Trench technology, optimizing on-resistance and switching speed
- **Operating temperature range**: -55°C to +150°C

Domain and module applications:

Applicable fields and modules
SS131-VB is widely used in power switches and control circuits in multiple fields due to its low VDS, high current and low RDS(ON) characteristics.
- **Low voltage power switch**: This MOSFET is very suitable for use in **power management modules**, such as **low voltage DC-DC converters**, **battery management systems** (BMS), etc., and can efficiently switch and control current under low voltage conditions to ensure efficient operation of the system.
- **Electric vehicle power management**: In electric vehicles, SS131-VB can be used for **battery power switches**, **motor drive systems** for efficient power control. Low on-resistance enables it to reduce energy loss and heat generation under high current loads.
- **Consumer electronics**: Suitable for consumer electronics such as **smart home devices**, **mobile power**, **portable battery-powered devices**, SS131-VB can provide efficient power conversion and power management, especially in space-constrained designs.
- **Power Regulation and Inverter Applications**: This MOSFET is suitable for **inverters** and **power regulation modules** in low voltage applications, which can improve the efficiency of the system and reduce heat loss during power conversion due to its low RDS(ON).
- **Industrial Control Systems**: In some industrial automation equipment and low voltage drive systems, SS131-VB provides a high-efficiency, low-loss power switching solution, which is widely used in **relay drive**, **motor control** and other fields.

In short, SS131-VB is a low-voltage, high-efficiency P-channel MOSFET suitable for multiple low-power, high-efficiency power electronics applications, especially in situations where high efficiency, low loss and space optimization are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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