The SQS466EEN-T1-GE3-VB is a high-efficiency N-channel MOSFET in a DFN8 (3X3) package for space-constrained applications. It has a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, with good switching performance and low on-resistance. Its gate voltage threshold (Vth) is 2.5V, and it can start at a low gate voltage to ensure efficient operation. The on-resistance (RDS(ON)) of this MOSFET is 15mΩ (VGS=4.5V) and 12mΩ (VGS=10V), and it can maintain low losses even when operating at high current (ID=45A). This makes it an ideal choice for power conversion applications that require high efficiency and low heat.
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| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | 60V | 2.5V | 45A | 15mΩ | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | 60V | 2.5V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | 60V | 2.5V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N |
Detailed parameter description
- **Package**: DFN8(3X3)
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate voltage threshold)**: 2.5V
- **RDS(ON)**:
- 15mΩ (VGS=4.5V）
- 12mΩ (VGS=10V）
- **ID (maximum drain current)**: 45A
- **Technology**: Trench technology, optimizing on-resistance and switching speed
- **Operating temperature range**: -55°C to +150°C
Applicable fields and modules
SQS466EEN-T1-GE3-VB MOSFET is suitable for power management and power switching applications in multiple fields with its low on-resistance and high current carrying capacity.
- **Portable device power management**: Due to its compact DFN8 (3X3) package, this MOSFET is very suitable for space-limited applications such as **smartphones**, **tablets** and **portable battery management systems**, and can provide efficient power conversion.
- **DC-DC converter**: In DC-DC converters, SQS466EEN-T1-GE3-VB provides low-loss switching capability and can maintain high efficiency under large load currents. It is suitable for various **communication equipment**, **LED drivers** and **industrial power supplies**.
- **Industrial automation and drive systems**: This MOSFET can be used in **motor drive systems**, **power conditioning systems** and other fields to provide efficient power switching and control, especially in industrial applications that require high efficiency and low heat generation.
- **Automotive electronics**: In **electric vehicles** and **automotive battery management systems**, the SQS466EEN-T1-GE3-VB can effectively control power conversion and power regulation, and is particularly suitable for power management in vehicle power supplies, chargers, and power systems.
- **Consumer electronics**: For small home appliances, **smart home** devices, etc., the SQS466EEN-T1-GE3-VB provides space-saving and efficient power control solutions that can improve device performance and extend service life.
In summary, the SQS466EEN-T1-GE3-VB is a small, efficient, low-power MOSFET suitable for a variety of electronic products and systems that require high current, high efficiency, and space optimization.
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