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SQS404EN-T1-GE3-VB Product details

Product introduction:

SQS404EN-T1-GE3-VB MOSFET Product Introduction

The SQS404EN-T1-GE3-VB is a high-performance unipolar N-channel power MOSFET in a DFN8 (3x3) package with a maximum drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 30A. This MOSFET uses Trench technology and has a low on-resistance (RDS(ON)) of 13mΩ at VGS = 10V and 19mΩ at VGS = 4.5V, which can provide efficient current control and switching performance. Its threshold voltage (Vth) is 1.7V, which is suitable for applications with low gate voltage control. Due to its low conduction loss and small package size, it is very suitable for electronic applications with miniaturization and high efficiency requirements, especially in power management, LED driving and electric vehicle charging that require fast switching and high efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 30V 1.7V 30A 13mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 30V 1.7V 30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 30V 1.7V 30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N
SQS404EN-T1-GE3-VB MOSFET parameter description

- **Package type**: DFN8 (3x3)
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 19mΩ (VGS = 4.5V)
- 13mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 30A
- **Technology**: Trench
- **Power rating**: To be confirmed (usually depends on the usage environment)
- **Operating temperature range**: To be confirmed (usually -55°C to 150°C)

The threshold voltage of this MOSFET is 1.7V, which means it starts to conduct when the gate-source voltage is 1.7V, so it is suitable for use with low-voltage control systems. Its low on-resistance ensures low power loss and high operating efficiency, and is particularly suitable for high current and fast switching applications.

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Domain and module applications:

SQS404EN-T1-GE3-VB MOSFET application areas and module examples

1. **Power management system**
SQS404EN-T1-GE3-VB MOSFET is suitable for efficient power management applications, especially in DC-DC converters, AC-DC power adapters and battery management systems. Due to its low on-resistance (RDS(ON)) and high current carrying capacity (ID = 30A), it can significantly reduce the loss in the power conversion process and improve energy efficiency. It is very suitable for high-efficiency power supply designs that require fast switching, precise current control and low heat loss.

2. **LED drive circuit**
In the LED drive circuit, SQS404EN-T1-GE3-VB MOSFET can be used as a current regulation switch to provide a stable current. Its low on-resistance helps reduce power loss and improve current accuracy, and is suitable for LED lighting applications that require strict current control. It can effectively reduce system heat and improve energy efficiency in LED drive circuits.

3. **Electric vehicle charging system**
In electric vehicle charging systems, SQS404EN-T1-GE3-VB can provide efficient current control as a power switch, and is suitable for power conversion modules in charging piles. Its high current carrying capacity and low on-resistance are very suitable for reducing power loss during efficient charging of electric vehicles, improving charging efficiency and extending the service life of equipment.

4. **Motor drive control system**
In motor drive systems, SQS404EN-T1-GE3-VB can be used as a low-end switch in H-bridge circuits. Due to its low on-resistance and high current carrying capacity, this MOSFET can improve the efficiency of motor control and reduce power losses. It is suitable for high-efficiency motor drive applications such as various industrial motors, household appliances, and power tools.

5. **Automation equipment and robotic systems**
This MOSFET is also suitable for automation and robotic control systems, especially those that require efficient power management and current regulation. Its low on-resistance and fast switching performance make it very suitable for high-precision controlled power modules, ensuring efficient and stable operation of robot systems.

6. **Intelligent Battery Management System (BMS)**
In the intelligent battery management system, SQS404EN-T1-GE3-VB can be used to efficiently control the charging and discharging process of the battery to ensure that the battery operates within a safe range. Due to its low on-resistance, it can significantly reduce the power loss of the system and improve the efficiency of the battery management system, extending the battery life.

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With its low on-resistance, high current carrying capacity and Trench technology, SQS404EN-T1-GE3-VB MOSFET is very suitable for applications that require high efficiency, high power management and miniaturized design, especially in power management, LED driving, electric vehicle charging and battery management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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