Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Single-P |
-40V |
|
-2V |
-45A |
|
|
12mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3) |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3) |
Single-P |
-40V |
|
-2V |
-45A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3) |
Single-P |
-40V |
|
-2V |
-45A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3) |
Single-P |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: SQS401EN-T1-GE3-VB
- **Package**: DFN8 (3x3)
- **Configuration**: Unipolar P-channel
- **VDS** (drain-source withstand voltage): -40V
- **VGS** (gate-source voltage): ±20V
- **Vth** (gate-source threshold voltage): -2V
- **RDS(ON)** (on-resistance):
- 13mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **ID** (maximum drain current): -45A
- **Technology**: Trench technology
- **Maximum power dissipation**: Depends on specific application and environment
- **Switching time**: Fast switching characteristics, suitable for high frequency operation
- **Operating temperature range**: -55°C Up to +150°C
Domain and module applications:
Product application areas and module examples
1. **Power management and DC-DC converter**:
**SQS401EN-T1-GE3-VB** is particularly suitable for **DC-DC converter** and **load switch control** in power management systems, especially in **negative voltage power supply** systems. Its low on-resistance (12mΩ) and high current handling capability (-45A) make it outstanding in applications with efficient current conversion and voltage stabilization.
2. **Electric vehicles and charging management systems**:
In **electric vehicles** and **charging management systems**, this P-channel MOSFET can be used as a switching element in **battery power switch** or **battery charging management system**. Through efficient current regulation and low loss control, it can improve the overall efficiency of the system and reduce energy loss during the charging process.
3. **Power control and load switching**:
In **power amplifier** and **load switch control**, SQS401EN-T1-GE3-VB can provide efficient current switching capability, especially suitable for **high power load switching applications**, such as switch control for power tools, household appliances and other high power loads.
4. **Automotive electronics**:
In **automotive electronic systems**, especially in **on-board power management** and **automotive lighting** modules, SQS401EN-T1-GE3-VB MOSFET can be used as a negative current switch in the power management system. Its high efficiency and low power consumption make it very suitable for controlling the stable power supply of high power loads in the automotive environment.
5. **Consumer Electronics**:
In **smart home devices** and **consumer electronics**, the SQS401EN-T1-GE3-VB can be used in **battery-powered systems** or **power adapters**, especially in applications that require negative voltage power or lower voltages. It can provide extremely low conduction losses in these high-efficiency power applications, reducing the power consumption of the device and extending battery life.
6. **Power Amplifiers and Audio Equipment**:
In audio amplifiers and **power amplifier** applications, this MOSFET can be used as a switching element for power regulation, especially in **high-efficiency audio equipment** for precise control of voltage and current. Through low on-resistance, it can effectively reduce heat loss in audio equipment and extend the service life of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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