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SQS400EN-T1-GE3-VB Product details

Product introduction:

SQS400EN-T1-GE3-VB MOSFET Detailed product introduction

**SQS400EN-T1-GE3-VB** is a **single-tube-N-Channel MOSFET** in **DFN8 (3x3)** package. Based on **Trench technology**, it has low on-resistance and excellent switching performance. It is designed for high-efficiency power conversion and current regulation applications. The **VDS** (drain-source voltage) of this MOSFET is 40V, which is suitable for low-voltage applications. It can provide a **maximum current output of 40A**, which is suitable for high-frequency switching power supplies, battery management, communication equipment and other fields. Its low on-resistance (**RDS(ON) = 4.5mΩ @ VGS = 10V**) ensures low power consumption and high efficiency, which is particularly suitable for space-constrained applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 40V 2.5V 40A 4.5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 40V 2.5V 40A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 40V 2.5V 40A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N
Detailed parameter description

- **Package**: DFN8 (3x3)
- **Configuration**: Single-tube-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ (VGS = 4.5V)
- 4.5mΩ (VGS = 10V)
- **Maximum current (ID)**: 40A
- **Technology**: Trench
- **Maximum power loss**: Depends on the thermal environment and is usually evaluated by thermal resistance.

Domain and module applications:

Applicable fields and module examples

1. **High-efficiency power management system**
**SQS400EN-T1-GE3-VB** is particularly suitable for switching modules in **DC-DC converter** and **AC-DC power supply** systems. Its low on-resistance makes it perform well in high-frequency switching processes, effectively improving power efficiency, especially in applications requiring small size, high power density and low energy consumption. It is widely used in portable devices, LED driver power supplies and other fields.

2. **Battery management and charging system**
In **Battery management system (BMS)** and **Battery charger**, SQM400EN-T1-GE3-VB MOSFET can handle higher current loads and ensure efficient conversion of power during battery charging. It is widely used in charging management of electric vehicles, power tools and mobile devices to help achieve faster and safer charging processes.

3. **Communications and consumer electronics**
Due to its ultra-low on-resistance and compact package, the SQS400EN-T1-GE3-VB MOSFET is suitable for power management modules of **communication equipment** (such as base station power supplies, Wi-Fi routers, etc.) and **consumer electronics** (such as smartphones, tablets). This MOSFET can improve the efficiency of power conversion while reducing power loss and extending the service life of the equipment.

4. **Automotive electronics**
In **automotive electronic systems**, especially **on-board power supplies**, **electric window controls** and **seat adjustment modules**, this MOSFET provides efficient current switching capabilities to cope with voltage fluctuations in the vehicle battery and ensure stable operation of the vehicle electrical system. Its small size and high current carrying capacity make it suitable for applications with limited space in the car.

5. **Industrial Automation**
This MOSFET is also widely used in **industrial automation systems**, especially in high-frequency, high-current applications such as **transmission control, load switching** and **power tool drive**. By providing efficient power conversion, the SQS400EN-T1-GE3-VB can effectively reduce the energy loss of the system and improve the overall efficiency of the equipment.

With its low on-resistance, compact package and high current carrying capacity, the SQS400EN-T1-GE3-VB MOSFET can provide an ideal solution in many applications that require high efficiency, low power consumption and space constraints, especially for mobile devices, battery management, automotive electronics and industrial applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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