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SQ4435EY-T1-GE3-VB Product details

Product introduction:

Product Introduction

SQ4435EY-T1-GE3-VB is a single P-type MOSFET in SOP8 package, suitable for low-voltage switching circuits and power management. With a drain-source voltage (VDS) of -30V and a maximum drain current (ID) of -9A, this MOSFET is very suitable for switching applications in low-voltage systems. With its low on-resistance (RDS(ON) = 18mΩ @ VGS = 10V), the SQ4435EY-T1-GE3-VB can provide high-efficiency performance and is suitable for battery-powered devices, power management systems and load switches. Its Trench technology helps reduce conduction losses and improve overall system efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-P -30V -1.7V -9A 18mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-P -30V -1.7V -9A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-P -30V -1.7V -9A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-P
Detailed parameter description

- **Package**: SOP8
- **Configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 24mΩ @ VGS = 4.5V
- 18mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -9A
- **Technology**: Trench
- **Maximum power loss**: Approximately 1.2W (assuming maximum current and on-resistance)
- **Operating temperature range**: -55°C to 150°C
- **Maximum junction temperature**: 150°C
- **Quiescent leakage current (IDSS)**: ≤10μA @ VDS=-30V
- **Input capacitance (Ciss)**: about 300pF @ VGS=0V
- **Output capacitance (Coss)**: about 30pF @ VDS=-30V

Domain and module applications:

Applicable fields and modules

1. **Low-power power management**:
SQ4435EY-T1-GE3-VB has low on-resistance and high withstand voltage, and is suitable for low-power power management systems, such as battery-powered devices, DC-DC converters, and smart battery protection circuits. Especially in portable electronic products, it can effectively manage the battery charging and discharging process to ensure the efficient operation of the system.

2. **Load switch**:
As a P-type MOSFET, SQ4435EY-T1-GE3-VB can be widely used in load switch circuits. Its low on-resistance enables it to efficiently transmit current, and is suitable for power switches in home appliances, automotive electronics, smart devices, etc. Especially in low-voltage power systems, it can provide reliable switching control and reduce system losses.

3. **Battery protection and power switching**:
SQ4435EY-T1-GE3-VB is suitable for battery management systems, especially battery protection circuits. It can be used as a switching control element for the battery to prevent problems such as overcharging and over-discharging, extend battery life and ensure the safety of the battery system. Its efficient switching performance also makes it an ideal choice for power switching systems.

4. **Portable Electronics**:
In portable electronic products such as smart watches, headphones, and wearable devices, the SQ4435EY-T1-GE3-VB can be used as part of a power management chip to help control battery power and improve system efficiency. Its small SOP8 package is ideal for these space-critical devices.

5. **Automotive Electronics**:
In the field of automotive electronics, the SQ4435EY-T1-GE3-VB is suitable for use in vehicle power systems, such as automotive battery management, load control, sensor power supply and other applications. It can provide stable current output to ensure the reliable operation of vehicle electronic systems in various environments.

6. **Smart Home and IoT Devices**:
SQ4435EY-T1-GE3-VB has important applications in smart home systems and IoT devices, especially those involving power switching or battery power. It can be used as a switch control element to manage the on and off state of the device power supply, ensure efficient operation and extend the battery life of the device.

7. **Power Amplifier and Audio Equipment**:
Due to its excellent conduction performance, SQ4435EY-T1-GE3-VB is also suitable for use in power modules that require fast switching, such as audio amplifiers and power amplifiers. These devices require efficient, low-loss switching elements to ensure high-quality audio output.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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