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SPP07N60S5-VB Product details

Product introduction:

1. **Product Introduction**
**SPP07N60S5-VB** is a **single N-channel MOSFET** in **TO220 package**, designed for high voltage and high current applications. With a **650V** maximum drain-source voltage (VDS), this MOSFET is suitable for **high voltage switching power supplies**, **inverters**, **motor drives** and other high power systems. Its **RDS(ON)** is **500mΩ** at **VGS=10V**, with low on-resistance, and can provide high current carrying capacity (maximum drain current **9A**). In addition, using **SJ_Multi-EPI technology**, this MOSFET has good switching characteristics and low switching losses, and is suitable for occasions requiring high voltage resistance and high power handling.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 3.5V 9A 500mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 650V 3.5V 9A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 650V 3.5V 9A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. **Detailed parameter description**
- **Model**: SPP07N60S5-VB
- **Package**: TO220 (with good heat dissipation performance, suitable for high power applications)
- **Configuration**: Single N-channel (suitable for conventional power switching and control applications)
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 500mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI (using multi-junction technology, with good switching performance and thermal stability)
- **Application areas**: Suitable for applications such as high voltage switching power supplies, inverters, motor drives, power management, etc.

Domain and module applications:

3. **Application fields and module examples**
**SPP07N60S5-VB** MOSFET is suitable for multiple high voltage and high power applications, especially in situations that require high withstand voltage, high current and high switching efficiency. The following are typical applications and modules of this MOSFET:

# a) **High Voltage Switch Mode Power Supplies**
This MOSFET is very suitable for **high voltage DC-DC converters**, **AC-DC power supplies**, **battery chargers** and other occasions. Its **650V** drain-source voltage can handle higher voltages, and **500mΩ** low on-resistance ensures low loss and high efficiency during operation. It is suitable for **photovoltaic power generation systems**, **UPS power supplies** and **high power power systems**, and can effectively improve the stability and conversion efficiency of the power system.

Summary:
**SPP07N60S5-VB** is a high-voltage, high-current **single N-channel MOSFET**. Its **650V** drain-source voltage and **500mΩ** on-resistance enable it to have excellent switching performance and low power consumption characteristics in high-voltage applications. This MOSFET adopts **SJ_Multi-EPI technology** and is suitable for **high-voltage switching power supplies**, **inverters**, **motor drives** and **power management systems**. It can provide efficient and stable power conversion and control to meet the needs of high-power and high-efficiency systems.

If you need more technical support or product information, please feel free to contact us!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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