Product introduction：
1. **Product Introduction**
**SPN9926BS8RGB-VB** is a **dual N-channel MOSFET** in **SOP8 package**, designed for low-voltage power switching applications. This MOSFET has a **20V** maximum drain-source voltage (VDS), suitable for various switching power supplies, battery management, power tools and other applications driven by low voltage. Its **RDS(ON)** is **19mΩ** at **VGS=10V** and **26mΩ** at **VGS=4.5V**, ensuring low power consumption and high-efficiency conduction performance. **SPN9926BS8RGB-VB** adopts **Trench technology**, has excellent switching performance, and is suitable for applications requiring high efficiency and low loss. Its threshold voltage (Vth) is between **0.5V and 1.5V**, which allows it to be driven at low voltage and is widely used in low-power systems.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
20V |
|
0.5~1.5V |
7.1A |
|
|
19mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
20V |
|
0.5~1.5V |
7.1A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
20V |
|
0.5~1.5V |
7.1A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
2. **Detailed parameter description**
- **Model**: SPN9926BS8RGB-VB
- **Package**: SOP8 (standard package, suitable for medium and high power applications)
- **Configuration**: Dual N-channel (N+N configuration, suitable for bridge or dual switch applications)
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 26mΩ @ VGS = 4.5V
- 19mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 7.1A
- **Technology**: Trench (trench technology, with low on-resistance and high switching efficiency)
- **Application Area**: Suitable for low voltage switching power supply, load switch, battery management, electronic control and other applications.
Domain and module applications：
3. **Application Fields and Module Examples**
**SPN9926BS8RGB-VB** MOSFET can be widely used in many fields, especially in low power switches, load switches and battery management systems. The following are some typical application fields and modules:
# a) **Low Voltage Switch Mode Power Supplies**
This MOSFET has low **RDS(ON)** and high **drain current**, making it an ideal switching element in **DC-DC converters** and **low voltage switch mode power supplies**. It has a very low on-resistance (19mΩ) at **VGS=10V**, which can effectively reduce power loss and improve power efficiency. This MOSFET is suitable for low voltage applications such as **mobile phone chargers**, **tablet power adapters**, **LED driver power supplies**, etc.
Summary:
**SPN9926BS8RGB-VB** is a high-efficiency, low-power **dual N-channel MOSFET** in **SOP8 package**, suitable for **low-voltage switching power supplies**, **load switches**, **battery management systems** and **portable devices** and other fields. Its **low RDS(ON)** and **low threshold voltage** characteristics make it excel in power management and low-power applications, while providing excellent switching performance and low losses. This MOSFET can improve efficiency, reduce power consumption, and extend the use time of equipment in multiple applications.
If you need further information or technical support, please feel free to contact us!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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