Product introduction：
1. **SPN7002S23RG-VB Product Introduction**
SPN7002S23RG-VB is a unipolar N-channel MOSFET in SOT23-3 package with Trench technology, designed for low-power applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, the maximum gate-source voltage (VGS) is ±20V, and the turn-on voltage threshold (Vth) is 1.7V, which is suitable for applications requiring lower current. Its on-resistance (RDS(ON)) is 3100mΩ at VGS = 4.5V and 2800mΩ at VGS = 10V. Although the RDS(ON) is high, its 0.3A rated current still makes it suitable for applications in low-power circuits. SPN7002S23RG-VB is a low-cost, compact MOSFET that is ideal for portable devices, signal switches, and low-current power management modules.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
60V |
20（±V） |
1.7V |
0.3A |
|
|
2800mΩ |
|
2. **SPN7002S23RG-VB detailed parameter description**
- **Package**: SOT23-3
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turning point voltage threshold (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Rated current (ID)**: 0.3A
- **Technology**: Trench
- **Maximum power dissipation (Pd)**: Unknown (subject to actual application environment)
- **Operating temperature range**: -55°C to +150°C
- **Package features**: SOT23-3 package, suitable for compact circuit boards and low-power applications, easy for automated assembly.
Domain and module applications：
3. **SPN7002S23RG-VB Application Fields and Module Examples**
- **Portable Device Power Management**:
SPN7002S23RG-VB MOSFET is suitable for power management modules in portable devices due to its lower rated current and small package. For example, it can be used as a switching element in a battery management system to control the switching of low current loads and help extend battery life.
- **Signal Switch**:
In low-power signal switching applications, SPN7002S23RG-VB is an ideal choice. Its low gate-source voltage drive characteristics make it suitable for switching control of low-voltage signals. For example, in signal switching between a microcontroller and an external circuit, MOSFET can stably provide switching functions, avoiding high power consumption and complex circuits.
- **Low-power DC-DC Converter (DC-DC)**:
In low-power DC-DC converter applications, SPN7002S23RG-VB can be used as a switching device, especially in low-voltage, low-current application scenarios. It is suitable for high-frequency, low-power power converters, helping to reduce power losses in power conversion and improve efficiency.
- **Sensors and Embedded Systems**:
The low on-resistance and lower drive current requirements of the SPN7002S23RG-VB make it an ideal choice for small embedded systems and sensor modules. It can be used as a switching element in sensor data transmission and control circuits, especially for sensor power management and signal processing.
- **LED drive circuit**:
In the LED drive circuit, the SPN7002S23RG-VB can be used as a switching element for low-power LED driving. The small package and low gate-source voltage requirements of this MOSFET make it very suitable for space-constrained LED drive circuits, especially in low-power lighting systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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