Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-6 |
Dual-N+N |
20V |
|
0.5~1.5V |
2.6A |
110mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-6 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC70-6 |
Dual-N+N |
20V |
|
0.5~1.5V |
2.6A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC70-6 |
Dual-N+N |
20V |
|
0.5~1.5V |
2.6A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-6 |
Dual-N+N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: SPN6335S36RGB-VB
- **Package type**: SC70-6
- **Configuration**: Dual-N+N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V (supports two gate-source voltages)
- **Threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 110mΩ (at VGS = 2.5V)
- 86mΩ (at VGS = 4.5V)
- **Maximum drain current (ID)**: 2.6A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Low power DC-DC converter**:
Due to its low RDS(ON) characteristics, the SPN6335S36RGB-VB is very suitable for use as a switching element in low power DC-DC converters. It is able to keep conduction losses low during the conversion process, thereby improving the efficiency of the system. It is particularly suitable for use in portable electronic devices such as mobile phones, laptops and portable battery chargers.
2. **Battery-powered systems**:
This MOSFET is also very suitable for battery-powered systems, especially in the low voltage range (such as below 20V). It can be used as a switch control element in a battery management system to help regulate the charging and discharging process, provide stable power output and reduce energy losses.
3. **Motor driver**:
In small motor drive modules, the SPN6335S36RGB-VB can be used as a switching element in an H-bridge drive circuit. Its fast switching characteristics and low RDS(ON) can improve the efficiency and response speed of the motor drive system, and is particularly suitable for applications such as fans, pumps and small power tools.
4. **Protection circuit**:
This type of MOSFET can also be used in overcurrent protection circuits to quickly respond to current changes and protect other components in the circuit. Due to its efficient conduction characteristics, it can quickly respond to load changes and ensure the safety and stability of the circuit.
5. **High-speed switching circuit**:
In high-speed signal switching applications, SPN6335S36RGB-VB can be used as a high-speed switching element. Its low threshold voltage (Vth) and fast switching capability make it very useful in digital circuits and RF applications, and can efficiently control signal paths.
Summary: SPN6335S36RGB-VB is suitable for low-power, high-efficiency applications such as mobile devices, battery management, low-voltage power conversion, motor drives and protection circuits. Its efficient performance and low conduction loss ensure stability and reliability in various applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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