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SMS501DE-VB Product details

Product introduction:

# **Product Introduction**

SMS501DE-VB is a single N-channel MOSFET in SOT23-3 package with high voltage withstand capability and a maximum drain-source voltage (V_DS) of 650V. This MOSFET adopts Plannar technology and is suitable for applications that require high voltage withstand capability and low current switching operation. Its high on-resistance (R_DS(ON) = 8400mΩ @ V_GS = 10V) limits its applicable current range, and the maximum drain current (I_D) is 1A. This product is suitable for low-power applications such as power conversion, power management, and load switching.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N 650V 30(±V) 3.5V 1A 8400mΩ
**Product parameter description**

- **Package type**: SOT23-3
The SOT23-3 package is a compact package suitable for applications with space and power density requirements. It is commonly used in small electronic devices and mobile applications.

- **Configuration**: Single N-channel MOSFET
The single N-channel design provides efficient current switching and control, suitable for low-power switching applications.

- **V_DS (drain-source voltage)**: 650V
The SMS501DE-VB can withstand a maximum drain-source voltage of 650V, suitable for high voltage applications, especially in the field of power management and power conversion.

- **V_GS (gate-source voltage)**: ±30V
The MOSFET can operate at a gate-source voltage of ±30V, providing high gate drive flexibility and suitable for various control circuits.

- **V_th (gate threshold voltage)**: 3.5V
The moderate gate threshold voltage (3.5V) ensures that the MOSFET is turned on at a lower gate voltage, which is suitable for a wide range of control circuit requirements.

- **R_DS(ON) (on-resistance)**: 8400mΩ @ V_GS = 10V
The relatively high on-resistance (R_DS(ON)) limits the power efficiency of this MOSFET, and it can still provide reliable switching characteristics in low current applications.

- **I_D (drain current)**: 1A
The maximum drain current is 1A, which is suitable for low power applications and can handle low power loads.

- **Technology type**: Plannar technology
Plannar technology ensures the stability and good switching performance of this MOSFET at higher voltages, which is suitable for various voltage control scenarios.

Domain and module applications:

**Applications and module examples**

1. **Low power supply management**
The 650V drain-source voltage of SMS501DE-VB makes it suitable for low power supply management. Although its on-resistance is high, it can still provide good switching performance under small current and voltage requirements.

**Example**: In the power management module of portable electronic devices, SMS501DE-VB can be used as a power switching element to help achieve efficient power distribution. Although it is not suitable for high current applications, it can meet the needs of devices with low power requirements.

2. **Low power load switching**
SMS501DE-VB can be used for low power load switch control, such as in applications such as home appliance control and LED drivers. Its high voltage capability and lower current switching characteristics make it an ideal choice when voltage switching is required.

**Example**: In the power switch module of power tools or portable home appliances, SMS501DE-VB can be used to control the switching operation of the equipment, helping to achieve reliable switching and protection functions.

3. **Power conversion applications**
Although the maximum drain current of SMS501DE-VB is only 1A, its high voltage tolerance makes it suitable for low-power power conversion applications. This product can be used in transformer driving, battery management and other fields to convert electric energy and control current.

**Example**: In low-power solar energy systems, SMS501DE-VB can be used as a switching element in the power conversion circuit to convert DC power to other voltage levels, helping to achieve efficient power management.

4. **Signal switch and protection circuit**
Due to its high voltage tolerance, SMS501DE-VB can also be used in signal switch and protection circuits. It can effectively control the current and protect the circuit from damage caused by overcurrent and overvoltage.

**Example**: In the circuit of communication equipment, SMS501DE-VB can be used as a signal switch element to control the transmission of high voltage signals and ensure the stable operation and protection of the circuit.

5. **Automation control system**
SMS501DE-VB can be used for low-power motor drive, sensor control and other applications in industrial automation control. Its higher drain-source voltage makes it more adaptable in control systems.

**Example**: In the drive circuit of automation equipment, SMS501DE-VB can be used as a switch element for motor control to provide switching function of low-power loads.

6. **LED drive application**
Due to its lower on-resistance, SMS501DE-VB also has certain applications in low-power LED drive circuits. It can be used for switch control of LED lamps to help improve power conversion efficiency.

**Example**: In the driving circuit of LED lamps, SMS501DE-VB can be used as a switching element to realize the switching control of LEDs and help improve the driving efficiency.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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