Product introduction：
SMG2314NE-VB MOSFET Product Introduction
SMG2314NE-VB is a single N-channel MOSFET in SOT23-3 package with 30V drain-source voltage (VDS) and 6.5A maximum drain current (ID). Its threshold voltage (Vth) is 1.7V, and the gate-source voltage (VGS) can reach ±20V. The on-resistance (RDS(ON)) of this MOSFET is 33mΩ at VGS=4.5V and 30mΩ at VGS=10V. It has low conduction loss and high efficiency. It is manufactured using Trench technology and is suitable for a variety of applications that require efficient current control and low power loss.
The design features of SMG2314NE-VB MOSFET make it perform well in many high-performance electronic products, especially in low-voltage, high-current power management, battery protection and switching power supplies. Due to its small SOT23-3 package, this MOSFET can also provide strong current control capabilities in space-constrained designs and is widely used in portable electronic devices, mobile phones, chargers and industrial control systems.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
30V |
20（±V） |
1.7V |
6.5A |
|
|
30mΩ |
|
SMG2314NE-VB MOSFET parameter description
| **Parameter** | **Value** |
|-----------------------------------|-------------------------|
| **Package** | SOT23-3 |
| **Configuration** | Single N-Channel |
| **Drain-Source Voltage（VDS）** | 30V |
| **Gate-Source Voltage（VGS）** | ±20V |
| **Threshold Voltage（Vth）** | 1.7V |
| **On-Resistance（RDS(ON)）@VGS=10V** | 30mΩ |
| **On-Resistance（RDS(ON)）@VGS=4.5V** | 33mΩ |
| **Maximum Drain Current（ID）** | 6.5A |
| **Technology** | Trench |
Domain and module applications：
Applicable fields and modules
1. **Battery management and power management**
SMG2314NE-VB is an ideal choice for efficient battery management and power management systems. Its low on-resistance (RDS(ON) is 30mΩ@VGS=10V) effectively reduces power loss and improves energy efficiency in battery-powered portable devices. Especially in the charging circuits and battery protection modules of mobile phones, tablets and other portable electronic products, SMG2314NE-VB can provide low power consumption and efficient current control.
2. **Mobile devices and consumer electronics**
In various consumer electronic devices, SMG2314NE-VB can be used as a switching element and is widely used in power adapters, fast chargers and other circuits that require high current switching. The small package of this MOSFET makes it suitable for design requirements with limited space, and is suitable for power management modules of consumer electronic products such as smart hardware, digital cameras, headphones, etc.
3. **Low Voltage DC-DC Converter**
The high efficiency and low on-resistance of SMG2314NE-VB make it the preferred switching element for DC-DC converters, especially for low voltage and high current conversion requirements. It can improve conversion efficiency and reduce system heat, and is an essential component in high-efficiency power supply design.
4. **Load Switch and Overcurrent Protection**
In load switch applications, SMG2314NE-VB can be used to effectively control load current, provide fast switching response and low switching loss. In addition, its high current carrying capacity makes it suitable for overcurrent protection circuits to ensure safe operation of equipment in power management systems.
5. **Industrial Control System**
In industrial control systems, SMG2314NE-VB can be used for applications such as power regulation, load control and signal transmission. Its compact package and high efficiency make it play an important role in industrial control modules that require precise control and high-frequency switching, especially in high-efficiency power systems and automation control.
6. **Automotive electronics and power tools**
SMG2314NE-VB is also widely used in the automotive electronics field, including vehicle battery management systems (BMS), vehicle power modules, and battery protection modules for power tools. Its excellent current carrying capacity and low on-resistance enable it to perform well in these high-load environments, ensuring efficient and stable operation of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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