Product introduction:
Product Introduction
**SMG2306A-VB** is a single N-channel MOSFET in a small **SOT23-3** package, suitable for low-voltage and low-power switching applications. The maximum drain-source voltage (VDS) of this MOSFET is **30V**, the gate-source voltage (VGS) is **±20V**, and the maximum drain current (ID) is **6.5A**, which can perform efficient switching at a lower gate voltage. By adopting **Trench** technology, SMG2306A-VB has extremely low on-resistance: **33mΩ** (VGS=4.5V) and **30mΩ** (VGS=10V), enabling it to maintain low power consumption during high-frequency switching operation. This MOSFET is suitable for a wide range of power management, load switching and battery-driven applications, and is particularly suitable for electronic products that require efficient switching performance and small packaging.
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Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT23-3 |
Single-N |
30V |
20(±V) |
1.7V |
6.5A |
|
|
30mΩ |
|
Detailed parameter description
- **Package type**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- At VGS=4.5V: 33mΩ
- At VGS=10V: 30mΩ
- **Drain current (ID)**: 6.5A
- **Technology**: Trench technology
- **Maximum power dissipation**: According to actual working conditions and heat dissipation design
- **Maximum gate voltage**: ±20V
- **Switching characteristics**: Suitable for high-frequency switching applications
- **Operating temperature range**: -40°C to +150°C
Domain and module applications:
Application fields and module examples
1. **DC-DC converter**
In **DC-DC converter**, SMG2306A-VB can realize efficient power conversion as a switching element. Its **low RDS(ON)** (30mΩ @ VGS=10V) and high **drain current** (6.5A) enable it to maintain low loss in high-frequency conversion, suitable for mobile phone chargers, portable devices and industrial power modules.
2. **Load switch control**
The **low on-resistance** and **small package** characteristics of SMG2306A-VB make it very suitable for **load switch control**, especially in applications requiring compact space and low power consumption. This MOSFET can be used as a load switch in low-voltage battery-powered systems to control the power switch of the device and improve system efficiency.
3. **Battery protection circuit**
In the **battery protection circuit**, SMG2306A-VB can be used to protect the battery from overcurrent and overvoltage damage. Due to its low on-resistance and high current carrying capacity, it can effectively manage the battery charging and discharging process to ensure the stability and safety of the system.
4. **LED driver**
SMG2306A-VB is also widely used in **LED driver**. In the LED drive system, this MOSFET can efficiently control the current flow, reduce energy loss, and keep the system working efficiently and stably, especially suitable for low-power and high-efficiency LED lighting systems.
5. **Intelligent power management system**
In the **Intelligent power management system**, SMG2306A-VB is suitable for low-voltage power systems that require precise switching control. Its **low RDS(ON)** and **high current capability** make it ideal for use in battery-powered devices, portable devices and wearable devices to improve power efficiency and extend battery life.
6. **Portable consumer electronics**
Due to its compact **SOT23-3** package, the SMG2306A-VB is ideal for **portable consumer electronics**, such as smartphones, tablets, wearable devices, etc. These products have high requirements for space, energy efficiency and switching performance, and the SMG2306A-VB can provide excellent performance in these occasions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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