Product introduction：
SM6105PSK-VB MOSFET Product Introduction
SM6105PSK-VB is a unipolar P-channel MOSFET in SOP8 package. This model uses advanced Trench technology, has a lower on-resistance (RDS(ON)), and can operate under higher current and lower switching loss conditions. Its maximum drain-source voltage (VDS) is -60V, the maximum gate-source voltage (VGS) is ±20V, and has a low threshold voltage (Vth) of -1.7V, which is suitable for power management, switching power supply, low-voltage high-efficiency drive and current control applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-P |
-60V |
|
-1.7V |
-10A |
|
|
25mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-P |
-60V |
|
-1.7V |
-10A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-P |
-60V |
|
-1.7V |
-10A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-P |
|
|
|
|
|
|
|
SM6105PSK-VB MOSFET parameter description
| **Parameter** | **Value** |
|---------------------|--------------------|
| **Package** | SOP8 |
| **Configuration** | Single P-Channel |
| **Drain-Source Voltage (VDS)** | -60V |
| **Gate-Source Voltage (VGS)** | ±20V |
| **Threshold Voltage (Vth)** | -1.7V |
| **On-Resistance (RDS(ON))@VGS=4.5V** | 28mΩ |
| **On-Resistance (RDS(ON))@VGS=10V** | 25mΩ |
| **Maximum Drain Current (ID)** | -10A |
| **Technology** | Trench |
Domain and module applications：
Applicable fields and modules
1. **Power management field**
SM6105PSK-VB is suitable for power conversion and management systems due to its low on-resistance and good current carrying capacity. It can provide efficient power control in power switching and DC-DC converter (DC-DC) circuits, ensuring lower energy loss and improving system efficiency.
2. **Low voltage and high efficiency drive circuit**
This MOSFET is particularly suitable for applications such as motor drive and LED drive circuits. The low on-resistance and high current carrying capacity of SM6105PSK-VB make it an ideal choice for high-efficiency drive systems, providing stable current and reducing heat and energy waste.
3. **Switching power supply module**
In switching power supply design, the efficient switching performance and low RDS(ON) of SM6105PSK-VB enable it to reduce switching losses and is suitable for power modules that require high-frequency switching. These features are particularly important in high-power output applications such as battery chargers, adapters, etc.
4. **Current Control and Protection Circuits**
Due to its low threshold voltage and high leakage current carrying capacity, the SM6105PSK-VB is suitable for current sensing circuits and overcurrent protection modules. The MOSFET can be used as a switching element, switching quickly when the load is overcurrent, providing effective current protection to prevent circuit damage.
Through these applications, the SM6105PSK-VB provides efficient and reliable performance for a variety of power electronic devices, and is a good choice for low-voltage, high-efficiency drive and power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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