Product introduction：
1. Product Introduction
**SM4913TSK-VB** is a **half-bridge N+N-channel MOSFET** in **SOP8** package, with low **on-resistance** and **high current carrying capacity**, which is very suitable for power management and high-efficiency switching power supply design. The **drain-source voltage (VDS)** of this MOSFET is 30V, and the maximum **gate-source voltage (VGS)** supported is ±20V. Its **threshold voltage (Vth)** is 1.7V, with good conduction characteristics, and can be turned on at a lower gate voltage. Its **on-resistance (RDS(ON))** is 12mΩ at VGS=4.5V and 8mΩ at VGS=10V, ensuring low power loss and high efficiency. In terms of **drain current (ID)**, SM4913TSK-VB can carry a maximum current of 8A, which is widely used in high-efficiency circuits such as power switching, power management, and motor drive. **Trench technology** is used to provide excellent performance and thermal stability.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Half-Bridge-N+N |
30V |
|
1.7V |
8A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Half-Bridge-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Half-Bridge-N+N |
30V |
|
1.7V |
8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Half-Bridge-N+N |
30V |
|
1.7V |
8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Half-Bridge-N+N |
|
|
|
|
|
|
|
2. Detailed parameter description
- **Package type**: SOP8
- **Configuration**: Half-bridge N+N-channel MOSFET
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ@VGS=4.5V
- 8mΩ@VGS=10V
- **Maximum leakage current (ID)**: 8A
- **Technology**: Trench technology
**Operating voltage**: The maximum operating voltage of SM4913TSK-VB is 30V, which is suitable for low-voltage power management applications.
**On-resistance**: This MOSFET has excellent conduction performance, and low on-resistance helps reduce energy loss during switching, thereby improving the efficiency of the overall system.
**Threshold voltage**: Vth is 1.7V, which ensures that the MOSFET can be turned on at a lower gate voltage, suitable for low-voltage drive control applications.
**Current carrying capacity**: The maximum leakage current of SM4913TSK-VB is 8A, which can meet the needs of high-efficiency power supplies and switching circuits with medium current requirements.
**Technical features**: It is manufactured using Trench technology, which gives it low RDS(ON) and low heat rise characteristics, suitable for high-efficiency switching circuits.
Domain and module applications：
3. Application fields and modules
**1. Power management module: **
- **SM4913TSK-VB** can be widely used in **power management modules**, especially in DC-DC converters, AC-DC adapters and high-efficiency power modules. Due to its low on-resistance and high current carrying capacity, it can maintain high efficiency under high-frequency switching, significantly reduce energy loss and improve the overall efficiency of the power supply.
**2. Half-bridge circuit: **
- As a **half-bridge N+N-channel MOSFET**, SM4913TSK-VB is very suitable for **half-bridge drive circuits**, such as in applications such as electric motor drives, load switches and inverters. It can provide low loss and high stability during high-frequency switching, ensuring long-term reliability of the system.
**3. Motor drive: **
- In **electric motor drive** applications, the low RDS(ON) and high current carrying capacity of SM4913TSK-VB make it very suitable for driving electric motors with large current and fast switching. Through efficient switching action, it can improve motor efficiency, reduce heat generation, and extend the service life of the equipment.
**4. Power Tools and Home Appliances: **
- In **power tools** and **home appliances** (such as brushless motor drive systems), the SM4913TSK-VB can be used as a power switch. Its low on-resistance ensures less power loss, while the high current capability can meet the high current requirements of these applications.
**5. LED Driver: **
- **SM4913TSK-VB** is suitable for **LED driver circuits**, especially in situations where efficient conversion and precise control are required. Due to its low RDS(ON) and high current carrying capacity, it can effectively drive high-power LEDs while reducing the power loss of the overall system and improving the energy efficiency of LED lighting.
**6. Switching Power Supply and Battery Management: **
- Suitable for power switch modules in **switching power supplies** and **battery management systems** (BMS). SM4913TSK-VB can play an important role in battery management and energy conversion, and ensures high efficiency and long-term stable operation during battery use through low on-resistance.
In summary, SM4913TSK-VB is widely used in power management, motor drive, LED drive and various high-efficiency switching circuits due to its low on-resistance, high current carrying capacity and Trench technology advantages. It is a highly integrated and high-efficiency power MOSFET.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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