Product introduction：
SM4603CSKC-TRG-VB Product Introduction
**Model**: SM4603CSKC-TRG-VB
**Package Type**: SOP8
**Configuration**: Dual N+P channel MOSFET
**Maximum drain-source voltage (VDS)**: ±30V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: 1.8V (N channel), -1.7V (P channel)
**On-resistance (RDS(ON))**:
- N channel: 13mΩ @ VGS=4.5V, 11mΩ @ VGS=10V
- P channel: 28mΩ @ VGS=4.5V, 21mΩ @ VGS=10V
**Maximum drain current (ID)**:
- N-channel: 10A
- P-channel: -8A
**Technology**: Trench Technology
SM4603CSKC-TRG-VB is a dual MOSFET device that integrates N-channel and P-channel MOSFETs in a SOP8 package. Its design makes it ideal for power management, load switching, battery management, and efficient power conversion. With low on-resistance (RDS(ON)) and high current carrying capacity, it can provide excellent efficiency in complex power control applications. The characteristics of N-channel and P-channel in parallel make it particularly suitable for systems that require bipolar switches, such as DC-DC converters, load switches, and high-efficiency power modules.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.8/-1.7V |
10/-8A |
|
|
11/21mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.8/-1.7V |
10/-8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.8/-1.7V |
10/-8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
SM4603CSKC-TRG-VB Detailed parameter description
- **Package type**: SOP8
- The standard SOP8 package makes the device suitable for a variety of industrial and consumer electronics applications, with good heat dissipation performance and convenient patch assembly.
- **Configuration**: Dual N+P channel MOSFET
- The device integrates N-channel and P-channel transistors with a complementary configuration for applications requiring efficient bidirectional current control.
- **Maximum drain-source voltage (VDS)**: ±30V
- It can withstand a voltage difference of up to 30V, suitable for medium voltage power supply and current control applications.
- **Maximum gate-source voltage (VGS)**: ±20V
- The gate voltage drive range of the device is ±20V, which ensures sufficient gate voltage control capability and is suitable for common logic level drive circuits.
- **Threshold voltage (Vth)**:
- N-channel: 1.8V, indicating that when the gate voltage reaches 1.8V, the N-channel MOSFET starts to turn on.
- P-channel: -1.7V, indicating that when the gate voltage is lower than -1.7V, the P-channel MOSFET starts to turn on.
- **On-resistance (RDS(ON))**:
- N-channel: 13mΩ @ VGS=4.5V, 11mΩ @ VGS=10V, low on-resistance provides higher efficiency and reduces power loss.
- P-channel: 28mΩ @ VGS=4.5V, 21mΩ @ VGS=10V, ensuring the efficient conduction performance of the P-channel.
- **Maximum Drain Current (ID)**:
- N-channel: 10A, suitable for high current load applications, capable of providing 10A continuous drain current.
- P-channel: -8A, suitable for negative current control, with a maximum drain current of -8A.
- **Technology**: Trench Technology
- Low on-resistance and high switching speed are achieved using Trench technology, thereby optimizing the efficiency and reliability of the device.
Domain and module applications：
Application fields and modules of SM4603CSKC-TRG-VB
1. **DC-DC Converters**
SM4603CSKC-TRG-VB, as a dual N+P channel MOSFET, can be used as an efficient switching element in DC-DC converters. N channel MOSFET is used for low-side switch, while P channel MOSFET is used for high-side switch. Its low on-resistance (RDS(ON)) helps to reduce losses in the power conversion process and improve the overall efficiency of the system. It is suitable for various battery-driven devices, portable power supplies and power management systems.
2. **Load Switches**
This device is suitable for load switch modules, which can efficiently switch between high and low current loads. The combination of N channel and P channel MOSFET enables it to provide reliable switching performance in a variety of applications, and is widely used in industrial control, consumer electronics, automotive electronics and other fields.
3. **Battery Management Systems**
In battery management systems, the SM4603CSKC-TRG-VB can be used to control and manage battery charge and discharge. Due to its excellent low on-resistance characteristics, it helps to improve charging efficiency and reduce heat generation, and is widely used in battery management systems for power tools, electric vehicles, and consumer electronic devices.
4. **Electric Vehicles and Energy Storage Systems**
In electric vehicles and energy storage systems, the SM4603CSKC-TRG-VB can be used for power conversion, load regulation, and battery charge and discharge control. It can handle high currents and provide low power losses, making it ideal for electric vehicles (EVs) and home energy storage solutions that require high energy efficiency.
5. **Inverters**
In inverter applications, the SM4603CSKC-TRG-VB can efficiently switch current and achieve power conversion. Due to its low on-resistance and high current carrying capacity, it is particularly suitable for use in solar inverters, power inverters and other energy conversion applications, helping to improve system efficiency and reduce energy waste.
6. **Power Management & Control Systems**
This MOSFET is very suitable for power management modules to help regulate current, voltage and load distribution. Especially in high-efficiency power supply design, SM4603CSKC-TRG-VB can provide precise power control and is widely used in embedded systems, home appliance control and automation equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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