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SM4374NSKP-VB Product details

Product introduction:

SM4374NSKP-VB MOSFET Product Introduction

SM4374NSKP-VB is a high-efficiency N-channel MOSFET in a DFN8 (5x6) package, designed for high-current, high-efficiency power management and switching applications. Its maximum drain-source voltage (VDS) is 30V, the gate-source voltage (VGS) is ±20V, and it supports a maximum drain current (ID) of up to 120A. This MOSFET uses advanced Trench technology and has an extremely low on-resistance (RDS(ON)), which is 5mΩ at VGS = 4.5V and as low as 3mΩ at VGS = 10V, which can significantly reduce power loss and improve system efficiency.

SM4374NSKP-VB has good thermal management characteristics and is suitable for high-power, high-frequency application environments. The device has a threshold voltage (Vth) of 1.7V and is suitable for various power conversion, battery management, industrial power systems and other occasions. It can meet the needs of efficient switching, load control and high current transmission. Due to its ultra-low on-resistance and high current carrying capacity, the SM4374NSKP-VB is suitable for use in a variety of circuits requiring high efficiency and low power loss, and is widely used in consumer electronics, automotive electronics, communications and industrial equipment.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 120A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
SM4374NSKP-VB MOSFET Detailed parameter description

- **Model**: SM4374NSKP-VB
- **Package**: DFN8(5x6)
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 5mΩ @ VGS = 4.5V
- 3mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
- **Maximum power dissipation**: Refer to the data sheet
- **Reverse recovery time (TRR)**: Refer to the data sheet
- **Total Gate Charge (Qg)**: Refer to datasheet
- **Operating Temperature Range**: -40°C to +150°C

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Domain and module applications:

SM4374NSKP-VB application areas and module examples

1. **High-efficiency power management**:
SM4374NSKP-VB is suitable for high-efficiency switches in power management systems such as DC-DC converters and AC-DC converters. Due to its low on-resistance and high current carrying capacity, this MOSFET can significantly improve power conversion efficiency and reduce heat generation. It is widely used in high-frequency power and battery-powered systems, such as smart power, embedded power and solar inverters.

2. **Electric Vehicles (EV) and Battery Management Systems**:
In electric vehicles (EV) and battery management systems, SM4374NSKP-VB, as a switching element, can provide efficient current control in high current and low voltage environments. Its low RDS(ON) characteristics reduce the power loss of the system, improve the efficiency during charging and discharging, and extend the battery life. It is particularly suitable for battery pack management, battery charging circuits and electric drive systems in electric vehicles.

3. **Industrial Power Control**:
SM4374NSKP-VB is suitable for use in industrial power control and load switching, especially in applications requiring high current transmission and low power loss. The ultra-low on-resistance of this MOSFET enables it to operate stably under high load currents and is widely used in industrial equipment power regulation, automation control systems, PLCs, and robot control circuits.

4. **Communication Equipment Power System**:
In communication equipment, SM4374NSKP-VB can be used for high-efficiency power management, signal processing modules, and radio frequency (RF) power systems. The high current capability and low power loss of this MOSFET enable it to provide excellent performance in applications requiring high-efficiency power conversion and a stable working environment, such as communication base stations, routers, and telecommunication equipment.

5. **Consumer Electronics Devices**:
SM4374NSKP-VB is suitable for high-performance consumer electronic devices, such as smartphones, power tools, and portable electronic devices. Its high efficiency and low on-resistance enable it to effectively reduce energy loss, thereby extending the use time and battery life of the equipment, especially for equipment that requires high current loads.

6. **Power tool drive system**:
In the drive system of power tools, SM4374NSKP-VB can be used as a load switch to support the smooth start-up and load switching of power tool motors. Its excellent current handling capability and low power loss help power tools provide stronger power output and longer service life, reduce heat loss and optimize the overall performance of power tools.

7. **Automation and smart home devices**:
In smart home and automation systems, SM4374NSKP-VB can be used for power conversion, current regulation and load control. Its low on-resistance and high current capability enable it to efficiently manage various home appliances, such as smart sockets, smart lighting control systems, temperature control systems, etc., and support long-term stable operation.

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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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