Product introduction：
1. Product Introduction
**SM2N7002-B-VB** is a low-power unipolar N-Channel MOSFET in a SOT23-3 package suitable for low voltage and low current applications. Its maximum drain-source voltage (VDS) is 60V, which is suitable for medium and low voltage power management and switch control applications. The threshold voltage (Vth) of this MOSFET is 1.7V, which means that it can be turned on at a low gate voltage, suitable for use in low power circuits. Its on-resistance (RDS(ON)) is 3100mΩ (at VGS=4.5V) and 2800mΩ (at VGS=10V). Despite the relatively high on-resistance, it still provides reliable switching performance in low current applications. The maximum drain current (ID) is 0.3A, making this MOSFET particularly suitable for low power power supplies, signal control and drive circuits.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
60V |
20（±V） |
1.7V |
0.3A |
|
|
2800mΩ |
|
2. Detailed parameter description
| **Parameter** | **Description** |
|--------------------|-----------------------------------------------------|
| **Package** | SOT23-3 |
| **Configuration** | Unipolar N-Channel |
| **VDS (Drain-Source Voltage)** | 60V |
| **VGS (Gate-Source Voltage)** | ±20V |
| **Vth (Threshold Voltage)** | 1.7V |
| **RDS(ON) (On-Resistance)** | 3100mΩ (at VGS=4.5V), 2800mΩ (at VGS=10V) |
| **ID (Drain Current)** | 0.3A |
| **Technology** | Trench |
- **Maximum drain-source voltage (VDS)**: The 60V rating makes this MOSFET suitable for medium voltage applications such as battery-powered devices, power switching, and signal conditioning.
- **Gate-source voltage (VGS)**: The maximum gate voltage is ±20V, ensuring compatibility with most standard drive circuits.
- **Threshold voltage (Vth)**: The 1.7V threshold voltage ensures that the MOSFET can be turned on at a lower gate voltage, making it suitable for low-power, low-voltage applications.
- **On-resistance (RDS(ON))**: The relatively high on-resistance of 3100mΩ (at VGS=4.5V) and 2800mΩ (at VGS=10V) limits its efficiency, but it still provides reliable switching performance in low-current applications.
- **Drain Current (ID)**: The maximum drain current is 0.3A, which makes it suitable for applications that require smaller currents, such as low-power control and signal processing circuits.
Domain and module applications：
3. Application fields and modules
- **Low-power switching power supply**: SM2N7002-B-VB is suitable for low-power power systems, especially in low-voltage and low-current power switches. Its maximum drain current is 0.3A, which can effectively perform switch control in low-power systems and is suitable for mobile devices, portable battery-powered devices and other occasions.
- **Battery Management System (BMS)**: This MOSFET is suitable for battery management systems, especially in low-voltage battery systems. It can efficiently handle low current flow, ensure battery charge and discharge control, and can be effectively used in battery protection circuits to prevent unsafe conditions such as overcharging and over-discharging.
- **Signal switch and signal processing circuit**: Due to the low threshold voltage (1.7V) and high on-resistance of SM2N7002-B-VB, it is suitable for use in signal switching and signal conditioning circuits, especially for applications with low current requirements. This makes this MOSFET widely used as a switch or signal conditioner in electronic communication equipment, wireless sensors and other low-power electronic devices.
- **Low-power sensor circuits**: This MOSFET can be widely used in low-power sensor applications, especially in sensor circuits that require high sensitivity and low current consumption. It is able to handle small currents and ensure stable operation of the sensor, providing efficient control in low-power sensor systems.
- **Low-power motor control**: The SM2N7002-B-VB is suitable for low-power motor control circuits, especially in motor applications driven by small currents. Its small drain current (0.3A) makes it an ideal choice for low-power DC motor and stepper motor drive circuits.
- **Consumer electronics**: Due to its low threshold voltage and high on-resistance, the SM2N7002-B-VB is ideal for low-power switches in consumer electronics. Common application scenarios include small home appliances, wireless devices, and low-voltage battery-driven electronics.
- **Overcurrent protection circuit**: This MOSFET can be used in overcurrent protection circuits, especially in low-power systems. It can quickly cut off the current flow when the current exceeds the safe range, thereby protecting other components in the circuit from damage.
- **Drive Circuit and Control Circuit**: SM2N7002-B-VB can be used in drive control circuits and other micro-power control circuits, such as micro-switching power supplies, microcontroller-driven circuits, and peripheral circuits of integrated circuits.
In summary, **SM2N7002-B-VB** is a small MOSFET suitable for low-power, medium-voltage systems. It is widely used in low-voltage switching power supplies, signal processing, battery management, low-power motor control and other fields. Due to its low current capability and low power consumption characteristics, it is an ideal choice for many low-power systems and devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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