Product introduction：
Product Introduction
SM2319PSAN-VB is a single P-channel MOSFET in a SOT23-3 package, designed for low-voltage, high-efficiency switching applications. Its maximum drain-source voltage (V_DS) is -30V, suitable for low-voltage power management systems. The maximum drain current (I_D) of the MOSFET is -5.6A, and it uses Trench technology for excellent conductivity. The on-resistance (R_DS(ON)) is 46mΩ at V_GS=10V and 54mΩ at V_GS=4.5V, ensuring low power consumption and high-efficiency operation. The threshold voltage (V_th) is -1.7V, indicating that the device can be driven by a lower gate voltage, providing excellent switching performance in low-voltage applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
|
46mΩ |
|
Detailed parameter description
- **Package type**: SOT23-3
- **Configuration**: Single P-type channel
- **Maximum drain-source voltage (V_DS)**: -30V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON))**:
- 54mΩ@V_GS=4.5V
- 46mΩ@V_GS=10V
- **Maximum drain current (I_D)**: -5.6A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation (P_d)**: Depends on specific usage conditions (refer to datasheet)
Domain and module applications：
Applications and modules
1. **Power management systems**
SM2319PSAN-VB is ideal for low voltage power management systems such as DC-DC converters, regulated power supplies, etc. It has a low on-resistance, which can effectively reduce energy loss in high-frequency switching operations, thereby improving the overall efficiency of the system.
2. **Portable devices and consumer electronics**
In portable devices such as smartphones, tablets and wearable devices, SM2319PSAN-VB can provide efficient power switching to help improve battery life. Its compact SOT23-3 package is ideal for space-constrained applications.
3. **Low-power battery-driven systems**
Due to the low on-resistance and low threshold voltage of this MOSFET, SM2319PSAN-VB is particularly suitable for battery-driven systems such as handheld devices, power tools, drones, etc. These devices require efficient battery management and power control, and SM2319PSAN-VB can significantly reduce power consumption in these applications.
4. **Switching Power Supply and LED Driver Circuits**
In LED driver circuits and switching power supply modules, SM2319PSAN-VB acts as a switching device, which can efficiently control the current flow and effectively reduce power loss. Its low on-resistance ensures efficient current control, especially suitable for applications that require precise current regulation.
5. **Electric Vehicle Electronics**
In the battery management system (BMS) of electric and hybrid vehicles, SM2319PSAN-VB can be used for battery switching, charging and discharging control circuits. This MOSFET can operate under the requirements of high efficiency and low power consumption, providing stable power management.
6. **Consumer Smart Hardware**
SM2319PSAN-VB is suitable for various types of consumer smart hardware, such as smart home devices, sensor modules, etc. These devices usually require low voltage, low power consumption and small size MOSFETs for power regulation and switching control.
In general, SM2319PSAN-VB has a wide range of applicability in a variety of low-power applications due to its low on-resistance and excellent switching performance, and is particularly suitable for power management, battery-driven systems and consumer electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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