Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Single-N |
20V |
|
0.5~1.5V |
58A |
5.5mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3) |
Single-N |
20V |
|
0.5~1.5V |
58A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3) |
Single-N |
20V |
|
0.5~1.5V |
58A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
|
|
2. **Detailed parameter description**
- **Package type**: DFN8(3x3)
- **Configuration**: Single channel N-type
- **VDS (drain-source voltage)**: 20V
- **VGS (gate-source voltage)**: ±12V
- **Vth (threshold voltage)**: 0.5V to 1.5V
- **RDS(ON)**:
- 5.5mΩ (VGS=2.5V)
- 5.5mΩ (VGS=4.5V)
- **ID (drain current)**: 58A
- **Gate Charge (Qg)**: Low
- **Maximum power consumption**: Depends on heat dissipation conditions and system design
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench
- **Switching speed**: Suitable for high-speed switching applications
- **Maximum drain-source voltage (VDS)**: 20V, suitable for low-voltage drive applications
---
Domain and module applications：
3. **Application Examples**
SIS438DN-T1-GE3-VB is an N-type MOSFET with excellent performance, suitable for multiple fields requiring low voltage and high current control. Here are some typical applications:
1. **Battery Management System (BMS)**
SIS438DN-T1-GE3-VB is very suitable for load switches and battery protection circuits in battery management systems due to its ultra-low RDS(ON) and high current carrying capacity. Its high-efficiency switching characteristics help reduce battery loss and increase battery life, and are suitable for battery management modules in various consumer electronics, smart batteries and power tools.
2. **DC-DC Converter**
This MOSFET can be used as a switching element in a DC-DC converter to provide high-efficiency power conversion, especially in low voltage input and high current output scenarios. It is suitable for DC-DC converters in mobile devices, industrial automation power supplies and smart home devices to help reduce system power loss.
3. **Wireless Charging System**
In wireless charging applications, the low on-resistance and high current carrying capacity of SIS438DN-T1-GE3-VB can effectively improve charging efficiency. It is suitable for wireless charging modules of mobile phones, wireless headphones, smart watches and other devices. The high-speed switching performance of MOSFET can also improve the stability and efficiency of wireless power transmission.
4. **Power Management and Load Switch**
In an efficient power management system, SIS438DN-T1-GE3-VB is suitable for switching power supplies and load switches. It can help reduce power loss in the power system and improve overall energy efficiency. It is widely used in portable devices, LED drivers, communication equipment and other fields to help manage power flow and extend the use time of equipment.
5. **Motor Drive System**
SIS438DN-T1-GE3-VB is suitable for motor drive applications, especially in low-voltage motor systems. Due to its high current capability and low switching losses, this MOSFET can provide stable and efficient current control in drive motor controllers and is suitable for use in scenarios such as home appliances, robots, and power tools.
6. **Smart battery-driven devices**
In smart battery-driven devices, such as smart home devices and portable consumer electronics, the SIS438DN-T1-GE3-VB, as a switching element, can play an important role in battery-powered systems, optimizing battery charging and discharging efficiency and reducing power losses.
7. **Automotive electronics**
This MOSFET can also be used in automotive electronic systems, especially battery management, energy recovery, and motor drive modules in electric vehicles (EVs). In these applications, the SIS438DN-T1-GE3-VB provides efficient current control and helps improve the efficiency of electrical energy utilization.
---
In summary, SIS438DN-T1-GE3-VB, as a low-voltage, high-current, high-efficiency N-type MOSFET, is widely used in many fields such as intelligent battery management, DC-DC conversion, wireless charging, power management, load switching, motor drive and intelligent battery-driven equipment. Its low on-resistance, fast switching speed and high current carrying capacity enable it to effectively improve system performance, reduce energy loss and improve overall efficiency in these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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