Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
160A |
|
|
1.8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
160A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
160A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
**
- **Model**: SIR888DP-T1-GE3-VB
- **Package Type**: DFN8 (5x6)
- **Configuration**: Single N-channel MOSFET
- **Drain-Source Voltage (VDS)**: 30V
- The maximum drain-source voltage of this MOSFET is 30V, which is suitable for low-voltage power management and control systems.
- **Gate-Source Voltage (VGS)**: ±20V
- The maximum gate-source voltage is ±20V, supporting a variety of drive voltages and adapting to different control circuits.
- **Threshold Voltage (Vth)**: 1.7V
- The threshold voltage is 1.7V, and the MOSFET can be turned on at a low voltage, which is suitable for low-voltage fast switching applications.
- **On-resistance (RDS(ON))**:
- **2.5mΩ (VGS = 4.5V)**
- **1.8mΩ (VGS = 10V)**
- At VGS = 4.5V, RDS(ON) is 2.5mΩ; at VGS = 10V, RDS(ON) is 1.8mΩ. This makes the MOSFET very low in power loss when on, especially suitable for high current, high efficiency applications.
- **Drain current (ID)**: 160A
- With a maximum leakage current of 160A, this MOSFET has high current carrying capacity and is suitable for power supplies and drive systems that require high current.
- **Technology**: Trench
- Using Trench technology, it has lower on-resistance, faster switching speed and smaller switching loss, suitable for high frequency and high-efficiency applications.
---
**
Domain and module applications：
Examples**
1. **High-efficiency power management system**
SIR888DP-T1-GE3-VB is suitable for various power management systems, especially in power modules that require high efficiency and high current handling, such as battery management systems, DC-DC converters, and power adapters. Due to its low on-resistance, it can significantly reduce power loss, improve overall power efficiency, and extend battery life, making it suitable for use in computer power supplies, smart power adapters, and server power systems.
2. **Motor drive and control system**
In motor control systems, the low RDS(ON) and high current handling capabilities of SIR888DP-T1-GE3-VB make it ideal for motor drive. Especially in industrial automation equipment, power tools, and robotic systems, this MOSFET can efficiently control the start, stop, and speed regulation of motors while reducing energy loss and improving overall system efficiency and reliability.
3. **LED Driver and Lighting Control System**
SIR888DP-T1-GE3-VB can be used in LED drive systems, especially in high-efficiency lighting applications such as commercial and industrial lighting, automotive headlights, backlights, etc. This MOSFET has an extremely low on-resistance, which can reduce the heat and power loss generated during the LED drive process, while improving the brightness and service life of the LED system.
4. **Battery Management and Charging System**
In the battery management system (BMS) and battery charging system, SIR888DP-T1-GE3-VB has excellent current control capability and low loss characteristics, which can efficiently manage the battery charging process, improve battery efficiency and extend battery life. It is especially suitable for battery management and charging modules in electric vehicles (EV) and energy storage systems.
5. **Wireless Charging System**
Wireless charging technology requires the switching elements to respond efficiently and quickly. SIR888DP-T1-GE3-VB is suitable for use in efficient wireless charging systems. Due to its extremely low on-resistance and high current carrying capacity, it can reduce losses during wireless charging and improve the energy efficiency of the system. It is widely used in wireless charging modules for smartphones, tablets, power tools, and electric vehicles.
6. **Power Conversion and Inverter System**
SIR888DP-T1-GE3-VB can be used in power conversion systems and inverter modules, especially in solar inverters, power conversion systems, and communication equipment power supplies. The low RDS(ON) and high current carrying capacity of this MOSFET enable it to efficiently perform power conversion, reduce energy losses, and improve the overall efficiency of the system.
7. **Power electronics and automation equipment**
In power electronics and industrial automation equipment, SIR888DP-T1-GE3-VB can be used in various high-efficiency power supplies and current control modules. Low on-resistance and high current carrying capacity make it particularly suitable for occasions requiring fast switching and high power management, improving the reliability and efficiency of industrial systems.
8. **Consumer electronics**
In consumer electronics, such as smart devices, power tools, and wearable devices, SIR888DP-T1-GE3-VB is widely used in high-efficiency power conversion modules, chargers, and battery management systems due to its high efficiency and low power loss characteristics, which helps to extend the working time of the equipment and optimize performance.
In summary, SIR888DP-T1-GE3-VB is a high-efficiency, low-loss, high-current-handling MOSFET suitable for a variety of high-current and high-efficiency applications, such as power management, drive systems, LED lighting, battery management, wireless charging, and other fields. Its low RDS(ON) and high current carrying capability make it an ideal choice for efficient and reliable use in these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Download now
中文
English
Back to previous page.png)
