Product introduction:
SIR814DP-T1-GE3-VB Product Introduction
**SIR814DP-T1-GE3-VB** is a high-performance **N-channel MOSFET** in a **DFN8 (5x6)** package, designed for high-efficiency power applications that require high current and low on-resistance. With a **40V** drain-source voltage and **120A** high current carrying capacity, this MOSFET is widely used in **high-efficiency power conversion** and **battery management systems**. Its **on-resistance (RDS(ON))** is only **2mΩ** at **VGS = 10V**, which means it has extremely low energy loss when turned on, which helps improve system efficiency, especially under high load conditions. Using **Trench technology**, this MOSFET also has fast switching characteristics and low temperature rise, suitable for applications requiring high efficiency, low heat and high current.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
40V |
|
3V |
120A |
|
|
2mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
40V |
|
3V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
40V |
|
3V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
SIR814DP-T1-GE3-VB Detailed parameter description
- **Package type**: DFN8 (5x6)
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
- **Maximum power consumption**: 200W (reference value)
- **Operating temperature range**: -55°C to +150°C
- **Pin configuration**: 8-pin, in line with DFN8 package standard
Domain and module applications:
Applications and modules
1. **High-efficiency power supply module (SMPS)**
**SIR814DP-T1-GE3-VB** is very suitable for **switching power supply (SMPS)**, especially in **DC-DC converter** and **AC-DC power supply**, due to its **ultra-low on-resistance** and **high current carrying capacity of 120A**. In these applications, the low on-resistance of MOSFET ensures efficient conversion of energy, minimizes power loss and improves the overall efficiency of the power supply.
2. **Battery management system (BMS)**
This MOSFET performs well in **battery management system (BMS)** and can provide efficient **battery charge and discharge control**. Due to its **low on-resistance of 2mΩ** and **high current carrying capacity of 120A**, it can effectively control the current during battery charging and discharging, ensuring efficient and fast charging and battery protection.
3. **Electric Vehicle (EV) Charging System**
In the **charging system** of **Electric Vehicle (EV)**, **SIR814DP-T1-GE3-VB** can be used for **battery charging management**. Its **40V drain-source voltage** and **ultra-low on-resistance** characteristics enable it to handle higher currents, ensuring minimal heat during battery charging and efficient operation of the system. Efficient power conversion helps to increase charging speed and extend battery life.
4. **Cordless Power Tools**
**SIR814DP-T1-GE3-VB** is also suitable for **cordless power tools**, especially in **battery management** and **motor drive**. Its **low RDS(ON)** ensures that very little heat is generated when working at high currents, thereby improving the working efficiency of the tool and the service life of the battery. The fast response to current in power tools is very demanding, and this MOSFET can effectively meet this demand.
5. **Consumer Electronics and Portable Devices**
In **Consumer Electronics** and **Portable Devices**, **SIR814DP-T1-GE3-VB** can be used in **portable power supplies** and **battery chargers**, such as **battery management systems for **tablets**, **smartphones** and **laptops**. Low on-resistance and high current handling capabilities ensure efficient charging and discharging processes, improve device endurance and reduce battery heating.
6. **Solar Inverters**
The **high current carrying capability** and **low on-resistance** of this MOSFET make it play an important role in **solar inverters**, especially during **DC-AC conversion**. By reducing power losses during the conversion process, the SIR814DP-T1-GE3-VB can improve the overall efficiency of **solar power generation systems** and help reduce system energy losses.
7. **High-power LED driver**
**SIR814DP-T1-GE3-VB** can be used for **LED driver power**, especially for high-power **LED lighting systems**. Due to its high current handling capability and low on-resistance, it can efficiently drive multiple LED modules in series while ensuring long life and stability of the system.
8. **Industrial Automation and Motor Drive**
This MOSFET can also be widely used in **motor drive systems** in **industrial automation**, especially systems that require high efficiency and fast response, such as **servo motor control**, **stepper motor drive**, etc. The low RDS(ON) of the MOSFET ensures high efficiency and minimal heat generation when driving the motor.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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