Product introduction：
SIR484DP-T1-GE3-VB Product Introduction
SIR484DP-T1-GE3-VB is an ultra-high performance N-type MOSFET in a DFN8(5x6) package, designed for high-performance, low-voltage and high-current applications. With a maximum drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 80A, this MOSFET has an ultra-low on-resistance (RDS(ON) = 9mΩ @ VGS = 4.5V and 7mΩ @ VGS = 10V), providing extremely high current carrying capability and significantly reducing power losses. By adopting advanced **Trench** technology, the SIR484DP-T1-GE3-VB can achieve superior switching performance in high-frequency and high-performance applications, reduce system heating, and improve the overall energy efficiency of the system.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
|
7mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
SIR484DP-T1-GE3-VB Detailed Parameters
| Parameter | Value | Description |
|-------------------------|------------------------------|---------------------------------------------|
| **Package** | DFN8 (5x6) | Small package, providing excellent heat dissipation and high current density|
| **Configuration** | Single N-type channel | Suitable for load switch and low-side switch applications|
| **Maximum drain-source voltage (VDS)** | 30V | Suitable for low-voltage power switch and battery management applications|
| **Gate-source voltage (VGS)** | ±20V | Gate voltage adapts to standard control voltage, supporting efficient switch control|
| **Threshold voltage (Vth)** | 1.7V | Ensure reliable conduction under typical driving voltage|
| **On-resistance (RDS(ON))** | 9mΩ @ VGS = 4.5V | Extremely low on-resistance for high system performance|
| **On-resistance (RDS(ON))** | 7mΩ @ VGS = 10V | Extremely low on-resistance for high current and high performance systems|
| **Maximum drain current (ID)** | 80A | High current capability for high load applications|
| **Technology** | Trench | Using Trench technology to reduce conduction losses and improve efficiency|
Domain and module applications：
Application Fields and Module Examples
1. **High-Efficiency Power Conversion Systems**
SIR484DP-T1-GE3-VB is widely used in power conversion systems such as **DC-DC converters**, **AC-DC power adapters** and **power management IC** due to its low on-resistance and high current capability. It can effectively reduce power loss and improve conversion efficiency, and is particularly suitable for devices with high power conversion efficiency requirements. This MOSFET is an ideal choice for designing high-efficiency power modules and can operate stably under high loads and high frequencies.
2. **Battery Management Systems**
In the battery management system (BMS), SIR484DP-T1-GE3-VB can efficiently control the battery charging and discharging process with its high current capability and low on-resistance. It is suitable for **electric vehicle (EV)** battery management systems and **portable device** battery charging systems, which can effectively reduce power loss in the battery management process, improve charging efficiency, and extend battery life.
3. **Power Tools and Home Appliances**
SIR484DP-T1-GE3-VB is also widely used in power management modules in **power tools** and **home appliances**. Due to its low on-resistance and high current carrying capacity, it can provide stable current control, reduce power loss, and improve efficiency in high-power demand devices, especially for applications with high current transmission and long-term high-load operation.
4. **Motor Driver Systems**
This MOSFET is an ideal choice in **motor drive systems**, especially in **brushless DC motors (BLDC)** and **stepper motor drives**. With its high current carrying capacity, the SIR484DP-T1-GE3-VB can provide precise control during the starting, stopping and reversing of the motor. It can reduce energy loss in motor drive systems and improve efficiency, and is a key component in power tools, home appliances and industrial automation.
5. **Load Switching and Protection Circuits**
Due to its ultra-low on-resistance, the SIR484DP-T1-GE3-VB is an ideal **load switch** or **overcurrent protection circuit** switching element. It can reliably carry high currents and effectively reduce switching losses. It is widely used in systems such as **battery protection circuits**, **current limiting modules** and **power outage protection**. The SIR484DP-T1-GE3-VB can ensure system stability and safety, especially for applications with high power management requirements.
6. **Consumer Electronics**
SIR484DP-T1-GE3-VB has extremely low on-resistance and high current capability, and is particularly suitable for **consumer electronics**. It can improve the charging efficiency and energy efficiency of **portable devices** and **wireless charging systems**, reduce energy loss, and increase the battery life of the device. This MOSFET is an ideal choice, especially in portable electronic devices that require high current support and long-term operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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