Product introduction：
1. Product Introduction (SIR460DP-T1-GE3-VB)
SIR460DP-T1-GE3-VB is a high-performance single N-channel MOSFET in DFN8 (5x6) package, designed for high-efficiency power conversion, load switching applications and other occasions requiring high current and low on-resistance. The maximum drain-source voltage (VDS) of this MOSFET is 30V, the gate-source voltage (VGS) is ±20V, and it has a very low on-resistance (RDS(ON) 3mΩ @ VGS=10V), and can support a drain current (ID) of up to 120A. Its advanced Trench technology makes the device have excellent performance in switching speed and efficiency.
SIR460DP-T1-GE3-VB provides efficient current conduction characteristics, suitable for applications requiring high current carrying capacity and fast switching, especially in battery management, power tools, power supplies and other high-efficiency power conversion systems. Its compact DFN8 (5x6) package helps optimize space utilization while improving heat dissipation efficiency, making it an ideal switching element in high-frequency, high-power power modules.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
2. Detailed parameter description
- **Model**: SIR460DP-T1-GE3-VB
- **Package**: DFN8(5x6)
- **Configuration**: Single N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 10V
- 5mΩ @ VGS = 4.5V
- **Drain current (ID)**: 120A
- **Maximum pulsed drain current (IDM)**: 500A (typical)
- **Power dissipation (Ptot)**: 30W (depending on heat dissipation conditions)
- **Switching times**:
- Turn-on time (tD(ON)): Fast
- Turn-off time (tD(OFF)): Fast
- Typical switching times suitable for high frequency applications
- **Technology**: Trench technology (low on-resistance, low switching losses)
- **Gate charge (Qg)**: 150nC @ VGS = 10V
- **Operating temperature range**: -55°C to +150°C
- **Maximum operating temperature**: +150°C
- **Thermal resistance (RθJC)**: 1.5°C/W
Domain and module applications：
3. Applications and modules
#### Battery Management System (BMS) and Charging System
SIR460DP-T1-GE3-VB is very suitable for battery management system (BMS), especially for scenarios that require high current and high efficiency charging. Due to its ultra-low on-resistance and high current support capability, it is very suitable for lithium battery management system, battery charging of power tools, portable devices and electric vehicles (EV). Low RDS(ON) can effectively reduce power loss during charging and improve the charging efficiency of the system, especially for fast charging and high frequency charging.
#### Power Tools and Drive Systems
The 120A drain current carrying capacity of SIR460DP-T1-GE3-VB makes it perform well in power tools and drive systems. Its low on-resistance and fast switching characteristics can provide efficient motor drive and ensure high efficiency and stability of power tools during startup and operation. Suitable for various power tools, such as electric drills, electric screwdrivers, electric gardening tools, etc., to provide efficient and reliable power conversion and drive control.
#### Efficient Power Management and DC-DC Converters
As a low RDS(ON) MOSFET, SIR460DP-T1-GE3-VB plays a vital role in DC-DC power converters. Its high current carrying capacity and fast switching characteristics make it very suitable for power management modules such as high-frequency power conversion, load switching, and voltage regulation. Its ultra-low on-resistance helps reduce power loss during power conversion and improve the efficiency of the entire power system.
#### Mobile Devices and Consumer Electronics
The high efficiency and compact package of SIR460DP-T1-GE3-VB make it very suitable for mobile devices and consumer electronics, especially in battery-driven products. It can provide efficient power conversion and management in these devices, extend battery life and reduce power loss. Whether it is a smartphone, tablet or wearable device, SIR460DP-T1-GE3-VB can provide excellent power control and efficiency optimization for these devices.
#### Automation and Robotic Systems
The ultra-high current and low on-resistance of SIR460DP-T1-GE3-VB make it have good application potential in automation and robotic systems. Especially in industrial automation, drive control of robot arms and other applications requiring high current drive, it can provide fast and efficient power switching control. It can effectively improve the dynamic response and energy efficiency of the entire system in scenarios such as high-power servo motor drive, precision motion control, and fast start and stop.
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**Summary**
SIR460DP-T1-GE3-VB is a high-efficiency, low on-resistance N-channel MOSFET suitable for various fields such as high-efficiency power management, battery management, automation drive, power tools, etc. Its 120A drain current carrying capacity and 3mΩ low RDS(ON) characteristics make it an ideal choice for low-voltage applications that require high current and high efficiency. It is particularly suitable for high-frequency power conversion, battery management, fast charging, power tools, and industrial control systems, and can effectively improve the energy efficiency and performance of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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