Product introduction：
SIR436DP-T1-GE3-VB Product Introduction
SIR436DP-T1-GE3-VB is an ultra-low on-resistance N-type MOSFET in a DFN8 (5x6) package, designed for high-efficiency power management applications. With a maximum drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 120A, it can provide excellent performance in high-current, high-efficiency power switching applications. Using advanced **Trench** technology, the on-resistance of this MOSFET is extremely low, at 5mΩ (@VGS=4.5V) and 3mΩ (@VGS=10V), which greatly reduces power loss and heat generation. The SIR436DP-T1-GE3-VB is ideal for high-efficiency power conversion, battery management systems, load switches and other high-current carrying applications, and can reduce energy losses while maintaining high switching frequencies.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
SIR436DP-T1-GE3-VB Detailed Parameter Description
| Parameter | Value | Description|
|-------------------------|------------------------------|---------------------------------------------|
| **Package** | DFN8 (5x6) | Small package, providing excellent heat dissipation and high current density|
| **Configuration** | Single N-type channel | Suitable for load switch and low-side switch applications|
| **Maximum drain-source voltage (VDS)** | 30V | Suitable for low-voltage power switch and battery management applications|
| **Gate-source voltage (VGS)** | ±20V | Gate voltage adapts to standard control voltage, supporting efficient switch control|
| **Threshold voltage (Vth)** | 1.7V | Ensure reliable conduction under typical driving voltage|
| **On-resistance (RDS(ON))** | 5mΩ @ VGS = 4.5V | Very low on-resistance for high system performance|
| **On-resistance (RDS(ON))** | 3mΩ @ VGS = 10V | Very low on-resistance for high current and high performance systems|
| **Maximum drain current (ID)** | 120A | High current capability for high load applications|
| **Technology** | Trench | Trench technology reduces conduction losses and improves efficiency|
Domain and module applications：
Applications and module examples
1. **High-Efficiency Power Conversion Systems**
SIR436DP-T1-GE3-VB has low on-resistance and high current capability, and is widely used in power conversion systems such as **DC-DC converters**, **AC-DC power adapters** and **power management IC**. It can effectively reduce power loss and improve conversion efficiency, making it an ideal choice for designing high-efficiency power modules. Especially in applications that are sensitive to power loss, SIR436DP-T1-GE3-VB provides significant advantages.
2. **Battery Management Systems**
In **Battery Management Systems (BMS)**, SIR436DP-T1-GE3-VB provides high current capability and extremely low on-resistance, making it play an important role in battery charging and discharging control. Whether in battery management for electric vehicles (EVs) or battery charging for portable devices, this MOSFET provides high-efficiency power switching, extending battery life and improving charging efficiency.
3. **Power Tools and Home Appliances**
As an ideal choice for low-voltage, high-current applications, the SIR436DP-T1-GE3-VB is suitable for power management modules for **power tools** and **home appliances**. Especially in devices that require high-current transmission and high-efficiency power control, the SIR436DP-T1-GE3-VB improves the efficiency and stability of the power system and reduces energy loss and heat generation through its low on-resistance and high current carrying capacity.
4. **Motor Driver Systems**
This MOSFET is also suitable for **motor drive systems**, especially in **brushless DC motors (BLDC)** and **stepper motor drives**. Due to its high current capability and low on-resistance, SIR436DP-T1-GE3-VB helps motor drive systems maintain high efficiency and reduces the heat generated during the drive process, thereby extending the life of the motor and control circuits. It is widely used in automation equipment, robots, power tools and other fields.
5. **Load Switching and Protection Circuits**
Due to its ultra-low on-resistance and high current carrying capacity, SIR436DP-T1-GE3-VB is very suitable as a switching element for **load switching** or **overcurrent protection circuits**. In these applications, it can efficiently control the flow of current while avoiding overheating and power loss, and is an indispensable part of the power management system. Typical applications include battery protection, current limiting modules and power supply power-off protection.
6. **Consumer Electronics**
The high performance and low power consumption of SIR436DP-T1-GE3-VB make it an ideal choice for **consumer electronics** such as portable devices, mobile power supplies, and wireless headsets. Its high current capability and low on-resistance can significantly improve charging efficiency and device energy efficiency, especially for mobile electronic devices that require high current support and long-term use.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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