Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
40V |
|
2.5V |
70A |
|
|
4.7mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
40V |
|
2.5V |
70A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
40V |
|
2.5V |
70A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
SIR418DP-T1-GE3-VB MOSFET Detailed Product Profile
**Product Name**: SIR418DP-T1-GE3-VB
**Package Type**: DFN8 (5x6mm)
**Configuration**: Unipolar N-channel
**Technology Type**: Trench Technology
**Maximum Drain-Source Voltage (VDS)**: 40V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: 2.5V
**On-Resistance (RDS(ON))**: 4.7mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 70A
Domain and module applications:
SIR418DP-T1-GE3-VB MOSFET Application Examples
1. **DC-DC Converter**:
Due to its low on-resistance (4.7mΩ @ VGS=10V) and high current capability (max 70A), the SIR418DP-T1-GE3-VB is particularly suitable for efficient DC-DC converters. Its low on-resistance enables it to significantly reduce energy losses during the conversion process and improve the conversion efficiency of the system. Application scenarios include devices that require efficient power conversion, such as smartphones, tablets, and power tools.
2. **Battery Management System (BMS)**:
The SIR418DP-T1-GE3-VB performs well in battery management systems, especially in charging and discharging control of electric vehicles and portable electronic devices. The MOSFET has high current carrying capability and low on-resistance, enabling it to maintain high efficiency during high-power battery charging and discharging, ensuring longer battery life and faster charging speeds.
3. **Power Factor Correction (PFC) Circuit**:
In the power factor correction circuit, SIR418DP-T1-GE3-VB can efficiently convert AC power into DC power. Its high current carrying capacity and low on-resistance make it very suitable for PFC circuits in power supply systems, improving the power factor of the power supply, reducing energy loss, and improving overall system efficiency.
4. **Load Switch**:
SIR418DP-T1-GE3-VB is suitable for efficient load switching systems, especially for high current switching applications. It can quickly and accurately control the start and stop of the load, and is used in smart home devices, power tools, LED driver power supplies and other fields to ensure high efficiency and stability during the switching process.
5. **Power Tools and Motor Drives**:
SIR418DP-T1-GE3-VB is very suitable for power tools and motor drive applications. It can efficiently control the start, stop and speed regulation of the motor, provide a smooth power supply, and is particularly suitable for power tools and motor drive systems that require fast response and high current.
6. **Consumer Electronics Power Management**:
This MOSFET can be widely used in power management in consumer electronics products, such as mobile devices, smart homes, TVs, etc. In these applications, the high efficiency and low heat characteristics of SIR418DP-T1-GE3-VB will improve battery life and device stability, especially for portable devices with strict requirements on power consumption and heat.
7. **Automotive Electronic Systems**:
In the battery management, motor control and charging systems of electric and hybrid vehicles, SIR418DP-T1-GE3-VB can be used for efficient power switches to help improve the power conversion efficiency of the system. This MOSFET can withstand large currents and is suitable for high-power battery and motor drive systems to meet the reliability requirements of vehicle applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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