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SIR408DP-T1-GE3-VB Product details

Product introduction:

SIR408DP-T1-GE3-VB Product Introduction

**SIR408DP-T1-GE3-VB** is an **N-channel power MOSFET** in a **DFN8 (5x6)** package, designed for high-efficiency power conversion and power management applications. It has a **30V** drain-source voltage and **80A** current carrying capacity, and is widely used in power electronic systems requiring high efficiency and high power. This MOSFET uses **Trench technology** and has an ultra-low on-resistance** (RDS(ON) = 7mΩ@VGS=10V)**, which significantly improves system efficiency and reduces heat loss. Its high current carrying capacity and low on-resistance enable it to provide excellent performance in a variety of power conversion applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 80A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 80A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 80A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
SIR408DP-T1-GE3-VB Detailed parameter description

- **Package type**: DFN8 (5x6)
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS = 10V
- 9mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 80A
- **Technology**: Trench
- **Maximum power dissipation**: 150W (reference value)
- **Operating temperature range**: -55°C to +150°C
- **Pin configuration**: 8 Pins, compliant with DFN8 package standard

Domain and module applications:

Application fields and modules

1. **High-efficiency battery management system (BMS)**
Due to **SIR408DP-T1-GE3-VB**'s **ultra-low on-resistance (7mΩ@VGS=10V)** and **high current carrying capacity (80A)**, it is very suitable for **battery management system (BMS)**, especially in **electric vehicles** and **portable devices**. This MOSFET can provide efficient current conversion, ensure high efficiency and long life of the battery during charging and discharging, and reduce energy loss.

2. **DC-DC converter and switching power supply (SMPS)**
In **DC-DC converter** and **switching power supply**, **SIR408DP-T1-GE3-VB**'s **low on-resistance** characteristics enable it to significantly reduce switching loss and conduction loss, improve energy efficiency, and is suitable for **high-efficiency power modules**, **communication equipment power supplies**, **server power systems**, etc. MOSFET can also effectively reduce heat loss and improve system reliability during high-frequency switching.

3. **Power Tools and Portable Appliances**
This MOSFET is suitable for power management and motor drive in **power tools** and **portable appliances**. Its **80A high current capability** can meet the needs of high-power motor drive systems. By reducing power loss, SIR408DP-T1-GE3-VB has significant advantages in power conversion and power amplification of power tools, especially in applications requiring high starting current, such as **cordless power tools**, **electric screwdrivers**, etc.

4. **Electric Vehicles and Electric Drive Systems**
In **electric vehicles (EVs)** and **electric drive systems**, **SIR408DP-T1-GE3-VB** can be used for **battery charging management** and **electric drive systems**. It supports high-power loads and provides low-loss, high-efficiency power conversion to ensure the stability and efficiency of batteries and drive systems during long-term operation, reduce energy losses, and extend the range of electric vehicles.

5. **Inverters and Solar Systems**
**SIR408DP-T1-GE3-VB** plays an important role in **solar inverters** and **other power converters**. Its low **RDS(ON)** and high **current carrying capacity** make it particularly suitable for use as a switching element in **inverters**, which can effectively convert DC power into AC power and supply power to the grid or load, improving the efficiency and stability of the solar system.

6. **High-frequency switching circuits**
Due to its **low on-resistance** and **high current carrying capacity**, SIR408DP-T1-GE3-VB has good performance in **high-frequency switching circuits**, especially in **wireless communication equipment** and **RF applications**, which can effectively reduce switching losses and improve system efficiency. It is suitable for various high-efficiency RF power amplifiers and switching power supplies.

7. **Industrial power supply system**
In **Industrial power supply system**, SIR408DP-T1-GE3-VB can be used in **Industrial automation equipment**, **Variable frequency drive** and **Motor control system**. It can withstand high current loads in these applications and enhance the stability and reliability of the system by reducing switching loss and conduction loss, ensuring long-term stable operation.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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