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SIHP7N60E-GE3-VB Product details

Product introduction:

1. Product Introduction (SIHP7N60E-GE3-VB)

SIHP7N60E-GE3-VB is a single N-channel MOSFET in a TO220 package for high voltage, high power applications. It has a maximum drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) that can withstand ±30V, making it suitable for use in high voltage power systems. This MOSFET has an on-resistance (RDS(ON)) of 500mΩ @VGS = 10V and a drain current (ID) of 9A. It uses advanced SJ_Multi-EPI technology to provide lower on-resistance, higher current carrying capacity and higher reliability. SIHP7N60E-GE3-VB has low switching losses and can provide stable performance in high-frequency switching applications. It is widely used in power conversion, power tools, industrial drive systems and other power control fields.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 3.5V 9A 500mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 650V 3.5V 9A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 650V 3.5V 9A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. Detailed parameter description

- **Model**: SIHP7N60E-GE3-VB
- **Package**: TO220
- **Configuration**: Single N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS = 10V
- **Drain current (ID)**: 9A
- **Maximum pulsed drain current (IDM)**: 30A
- **Power dissipation (Ptot)**: 50W (depending on heat dissipation conditions)
- **Technology**: SJ_Multi-EPI (enhanced polycrystalline structure, improved current carrying capacity and switching performance)
- **Switching time (tD(on), tD(off), tR, tF)**: Typical switching time can be found in the data sheet, suitable for high frequency switching applications
- **Gate charge (Qg)**: 60nC @ VGS = 10V (typical value)
- **Operating temperature range**: -55°C to +150°C
- **Maximum operating temperature**: +150°C
- **Heat dissipation requirements**: Heat sink requirements (select according to load conditions when using)

Domain and module applications:

3. Applications and modules

#### Power management and switching power supply
SIHP7N60E-GE3-VB is mainly used for power management and switching power supply systems. Due to its maximum drain-source voltage of 650V, it can adapt to high voltage applications such as AC-DC power converters, DC-DC converters, inverters, etc. This MOSFET can help improve the efficiency of the system and reduce power loss through efficient conduction and low-loss switching performance in the power circuit. It is particularly suitable for industrial power supply, computer power supply and LED driver power supply.

#### Industrial drive and power tools
In the field of power tools and motor control, SIHP7N60E-GE3-VB provides stable current regulation and high current carrying capacity, which is suitable for various high-voltage drive control applications. For example, in power tool drive circuits and electric battery chargers, MOSFET can ensure fast response and high efficiency of the system, reduce power loss, and improve equipment reliability.

#### Electric Vehicles and Hybrid Electric Vehicles (HEV)
SIHP7N60E-GE3-VB can be widely used in battery management systems (BMS) and motor drive systems of electric vehicles (EV) and hybrid electric vehicles (HEV). The high voltage tolerance and superior switching performance of this MOSFET make it very suitable for use in power control, inverters, and battery protection circuits in electric vehicles, helping to improve the energy efficiency of electric vehicles and extend battery life.

#### Renewable Energy Systems (such as Solar Inverters)
Inverters in solar power generation systems require efficient power conversion and high voltage tolerance. SIHP7N60E-GE3-VB is suitable for the design of solar inverters due to its 650V withstand voltage capability. In solar power generation systems, this MOSFET can effectively convert direct current (DC) to alternating current (AC), allowing electricity to be connected to the grid and used by homes or industries, improving the overall efficiency and stability of solar energy systems.

#### High-power electrical control system
In electrical control systems, especially in high-power applications, SIHP7N60E-GE3-VB can provide better switching control and lower conduction losses. It is suitable for high-voltage power systems such as power conversion, load switching, pulse power control, and ensures efficient power flow. This MOSFET is widely used in industrial automation equipment and switch control equipment, especially in environments requiring high voltage and high current.

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**Summary**
SIHP7N60E-GE3-VB is a high-voltage-tolerant, low-conduction-loss N-channel MOSFET suitable for scenarios with high voltage and high power requirements. Its 650V withstand voltage capability, 500mΩ on-resistance, and 9A drain current capability enable it to provide excellent performance in multiple fields such as power conversion, power tools, electric vehicles, solar inverters, and high-power control systems, meeting the needs of high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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