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SiHP12N50C-E3-VB Product details

Product introduction:

SiHP12N50C-E3-VB MOSFET Product Introduction

**SiHP12N50C-E3-VB** is a high-performance unipolar N-type MOSFET in a TO220 package suitable for high voltage (650V) and medium current (9A) applications. The maximum gate-source voltage (VGS) of this MOSFET is ±30V, and it has a threshold voltage (Vth) of 3.5V, which is suitable for high-voltage applications that require stable switching characteristics. Its on-resistance (RDS(ON)) is 500mΩ (VGS=10V), which can provide lower losses in high current environments. SiHP12N50C-E3-VB uses SJ_Multi-EPI technology to optimize switching speed and efficiency, and is very suitable for power management, switching power supplies, inverters and other applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 3.5V 9A 500mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 650V 3.5V 9A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 650V 3.5V 9A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
SiHP12N50C-E3-VB MOSFET detailed parameter description

| **Parameter** | **Value** |
|--------------------|---------------------------------|
| **Model** | SiHP12N50C-E3-VB |
| **Package** | TO220 |
| **Configuration** | Unipolar N-type MOSFET |
| **Maximum drain-source voltage** | 650V |
| **Maximum gate-source voltage** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 500mΩ (VGS = 10V) |
| **Maximum drain current (ID)** | 9A |
| **Technology** | SJ_Multi-EPI technology|

Domain and module applications:

SiHP12N50C-E3-VB MOSFET application areas and module examples

1. **Switching Power Supply (SMPS)**
SiHP12N50C-E3-VB MOSFET is suitable for switching elements in switching power supplies (SMPS), especially in high voltage (650V) and medium current (9A) applications. The high voltage withstand capability and low on-resistance (500mΩ) of this MOSFET make it an ideal choice for efficient power management systems. It is widely used in equipment such as battery chargers, adapters and uninterruptible power supplies (UPS) to help reduce power losses and improve power conversion efficiency.

2. **Inverters**
In inverter applications, the high withstand voltage characteristics and low on-resistance of SiHP12N50C-E3-VB enable it to efficiently convert DC to AC. This MOSFET performs well in high-frequency applications that require stable switching performance, such as power conversion in solar inverters and wind power generation systems. Its fast switching response and low power loss can improve the overall efficiency of the inverter system and reduce heat generation.

3. **Electric Vehicle (EV) Battery Management System (BMS)**
SiHP12N50C-E3-VB is also suitable for the battery management system (BMS) of electric vehicles. Due to its low on-resistance and high voltage tolerance, this MOSFET can effectively control the charging and discharging process of the battery pack, ensuring the efficiency and safety of battery management. In the battery protection circuit of electric vehicles, the switching speed and current control capability of MOSFET make it a key component for regulating and protecting battery performance.

4. **Power Regulation and Power Factor Correction (PFC) Circuits**
SiHP12N50C-E3-VB is suitable for power regulation and power factor correction (PFC) circuits. This MOSFET can be used in AC-DC power supplies, especially those involving higher input voltages (such as 220V AC power) and larger currents. Its high voltage tolerance and low conduction losses enable it to improve the efficiency of power factor correction circuits, which are commonly found in computer power supplies, electrical equipment, and industrial power systems.

5. **Lighting and driver power supplies**
In high-efficiency lighting systems (such as LED driver power supplies), the SiHP12N50C-E3-VB can be used as a key switching element to help accurately regulate the current supply. Its low on-resistance and efficient switching performance are very suitable for controlling high-power LEDs in lighting and display systems, reducing system heat generation and improving energy efficiency. It has high application value, especially in high-power street lighting and indoor industrial lighting.

6. **Power tools and home appliances**
This MOSFET is suitable for motor drive and power management circuits in power tools and home appliances. Due to its high withstand voltage of 650V and maximum drain current of 9A, the SiHP12N50C-E3-VB is suitable for driving DC motors, fans and other loads in small and medium-sized power tools and home appliances. These applications require efficient current switching and stable switching performance to ensure reliable operation and extend the service life of the equipment.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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