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SiHFD9120-E3-VB Product details

Product introduction:

1. Product Introduction (SiHFD9120-E3-VB)

The SiHFD9120-E3-VB is a dual P-Channel MOSFET in a DIP8 package suitable for low- to medium-power applications. Its VDS is -100V, which has a high withstand voltage and is suitable for negative power supply design. The RDS(ON) of the MOSFET is 1000mΩ at VGS=10V, and its maximum leakage current (ID) is -0.7A. Manufactured using Trench technology, it has low on-resistance and stable performance, and is suitable for applications that require a negative pressure working environment, especially in low-power load switches and power management systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DIP8 Dual-P -100V -3V -0.7A 1000mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DIP8 Dual-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DIP8 Dual-P -100V -3V -0.7A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DIP8 Dual-P -100V -3V -0.7A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DIP8 Dual-P
2. **Detailed parameter description**

| **Parameter** | **Description** |
|-------------------------|-------------------------------------------------------------|
| **Model** | SiHFD9120-E3-VB |
| **Package type** | DIP8 |
| **Configuration** | Dual P-Channel |
| **VDS (drain-source voltage)** | -100V |
| **VGS (gate-source voltage)** | ±20V |
| **Vth (throw-on voltage)** | -3V |
| **RDS(ON) (on-resistance)** | 1000mΩ@VGS=10V |
| **ID (drain current)** | -0.7A |
| **Technology** | Trench |
| **Maximum power consumption** | 30W |
| **Operating temperature range** | -55°C to 150°C |
| **Thermal resistance (package)** | 62°C/W |
| **Qg (gate charge)** | 25nC |
| **Packaging material** | Epoxy|

Domain and module applications:

3. **Application Fields and Module Examples**

#### 1) **Power Management Systems**
**SiHFD9120-E3-VB**, as a **dual P-Channel MOSFET**, can be used in **power management systems** to switch negative voltage sources, and is particularly suitable for **positive and negative power** management applications. In these applications, it is usually necessary to control the switch of negative voltage. The P-Channel configuration of MOSFET can effectively manage the flow of negative current and provide stable performance, especially in **low-power power modules** and **battery management systems**.

#### 2) **Battery Management Systems**
In **battery management systems (BMS), **SiHFD9120-E3-VB** is mainly used for **battery charging and discharging switch control**. Its **negative voltage operating characteristics** make it an ideal choice for controlling the current flow across the battery. This MOSFET can effectively control the charging and discharging paths of the battery and is widely used in systems such as **lithium batteries** and **lead-acid batteries**, especially in current management and battery protection, which can extend the battery life.

#### 3) **Switching Power Supplies**
**SiHFD9120-E3-VB** is suitable for negative power switching in **switching power supplies (SMPS)**. In many modern **DC-DC converters** and **AC-DC converters**, precise current control is often required on the negative power rail. This dual P-Channel MOSFET ensures stable operation in negative power supply designs, reduces switching losses, and improves power efficiency, and is particularly suitable for **power factor correction (PFC)** and **low power converters**.

#### 4) **DC Motor Drives**
This MOSFET can be used for motor current reversal control in **DC Motor Drive Systems**, especially in **low power DC Motor** applications. The **negative current capability** of MOSFET makes it an ideal choice for regulating motor steering and controlling current direction. With the appropriate drive circuit, precise motor control can be achieved, and it is widely used in **power tools**, **robots**, **automation equipment** and other fields.

#### 5) **Load Switching**
**SiHFD9120-E3-VB** can be used as a load switch for **switching control** in a variety of electrical equipment, especially for **negative voltage load** applications. In **home appliances** and **small electronic devices**, common load switching requires the support of negative power supply. This dual P-Channel MOSFET can provide stable current switching and efficient control, and is widely used in **power control modules** and **load protection systems**.

#### 6) **Inverters**
In **inverter** systems, especially **solar inverter** and **battery energy storage systems**, **SiHFD9120-E3-VB** can be used as a negative voltage switching control element for **DC-AC conversion**. It can withstand higher **negative voltage** and has **low on-resistance**, which helps improve the overall efficiency and stability of the inverter, especially in **low-power inverter designs**.

#### 7) **Power management in audio and video equipment**
In the power modules of **audio and video equipment**, **SiHFD9120-E3-VB** can be used for **negative power regulation**, such as controlling the switching of negative power in **amplifier power**. Its **low on-resistance** helps reduce power loss and ensures that the equipment operates at high performance, especially suitable for **home theater systems** and **high-end audio equipment**.

### Summary:
**SiHFD9120-E3-VB** is a dual **P-Channel MOSFET**, its **-100V** withstand voltage capability and **0.7A** drain current make it very suitable for negative power applications. Its **low on-resistance** (1000mΩ@VGS=10V) and **Trench technology** provide excellent switching characteristics and efficiency. This MOSFET can be widely used in **power management systems, battery management, DC motor drives, load switches, inverters** and other fields, especially suitable for **negative power switch and current control** applications, helping to improve efficiency, reduce power loss, and stable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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