Product introduction:
SiHFD020-E3-VB Product Introduction
SiHFD020-E3-VB is an N-channel power MOSFET based on Trench technology. It adopts DIP8 package and is designed for low voltage and medium current applications. The maximum drain-source voltage (V_DS) is 60V. The MOSFET has a low on-resistance (R_DS(ON) is 100mΩ at V_GS = 10V), which can effectively reduce power loss and improve overall system efficiency. Its maximum drain current (I_D) is 2.5A, which is suitable for medium-power switching power supplies, battery management, load control and other fields.
The threshold voltage (V_th) of SiHFD020-E3-VB is between 1V and 3V, which is suitable for low-voltage drive switching applications, and due to its Trench technology, it provides high switching frequency and low conduction loss. This MOSFET has excellent thermal stability and can operate over a wide current range, making it suitable for a variety of electronic circuits, especially in applications such as high-efficiency power management, audio amplifiers, and battery-powered devices.
File download
Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DIP8 |
Single-N |
60V |
|
1~3V |
2.5A |
|
|
100mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DIP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DIP8 |
Single-N |
60V |
|
1~3V |
2.5A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DIP8 |
Single-N |
60V |
|
1~3V |
2.5A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DIP8 |
Single-N |
|
|
|
|
|
|
|
SiHFD020-E3-VB Detailed parameter description
- **Package type**: DIP8
- **Configuration**: Single N-Channel MOSFET
- **Maximum drain-source voltage (V_DS)**: 60V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1V ~ 3V
- **On-resistance (R_DS(ON))**:
- 120mΩ (at V_GS = 4.5V)
- 100mΩ (at V_GS = 10V)
- **Maximum drain current (I_D)**: 2.5A
- **Technology**: Trench (Trench technology)
- **Input capacitance (C_iss)**: About 250pF (typical value)
- **Reverse recovery time (T_rr)**: about 30ns (typical value)
- **Maximum power dissipation (P_D)**: about 20W (depending on heat dissipation conditions)
The Trench technology of this MOSFET not only optimizes the on-resistance, but also improves the switching frequency and efficiency. The relatively low threshold voltage enables it to be driven efficiently in a low voltage environment, suitable for applications with medium current loads.
Domain and module applications:
Application Fields and Module Examples
1. **Switching Power Supplies**:
SiHFD020-E3-VB is used as a power switching element in switching power supplies for voltage conversion and current regulation. Due to its low on-resistance (especially when V_GS = 10V), it can effectively reduce switching losses and improve system efficiency, and is suitable for use in various small switching power supplies (for example, DC-DC converters and buck converters).
2. **Battery Management Systems**:
In battery management systems, SiHFD020-E3-VB can be used as a switching element to control the battery charging and discharging process to ensure efficient charging and safe operation of the battery. It is suitable for battery management in portable devices, mobile power supplies, and power tools, especially in applications with a lower battery voltage range.
3. **Audio Amplifiers**:
SiHFD020-E3-VB is suitable for switching power supplies and power regulation in audio amplifiers due to its low on-resistance and fast switching characteristics. It can effectively improve the efficiency and sound quality of audio equipment, reduce power loss and increase the output stability of the system, especially for portable audio equipment and home audio systems.
4. **Motor Drivers**:
In motor drive systems, SiHFD020-E3-VB can be used as a power switch to control the start, run and stop of the motor. This MOSFET can effectively drive small and medium power electric motors and is suitable for motor control in household appliances (such as fans, power tools) and automotive systems.
5. **LED Drivers**:
SiHFD020-E3-VB can be used as a switching element in LED drive circuits to control the current of LED lamps. By optimizing current control and improving efficiency, it can provide stable light output in various lighting applications, especially suitable for small lighting systems and dimmable lamps.
6. **Low Power Power Converters and Inverters**:
In low power inverters, SiHFD020-E3-VB can be used to convert DC to AC. Its low on-resistance and efficient switching performance make it suitable for applications such as solar inverters and small UPS systems to provide stable power output and reduce energy losses.
7. **Electrical Load Control**:
In electrical load control systems, SiHFD020-E3-VB can be used as a switching element to control the flow of load current and ensure system protection in overload or overcurrent conditions. It is suitable for electrical switching devices such as thermostats, overload protection circuits and automatic control of small power systems.
Through these applications, the SiHFD020-E3-VB provides a high-efficiency, low-loss solution suitable for a wide range of electronic products and power management modules, especially in medium current, low to medium voltage environments, playing an important role.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours