Product introduction：
Product Introduction
**Model**: SiHF614-VB
**Package type**: TO220
**Configuration**: Single-N-Channel
**Maximum drain voltage (V_DS)**: 250V
**Gate-source voltage (V_GS)**: ±20V
**Threshold voltage (V_th)**: 3V
**On-resistance (R_DS(on))**: 1100mΩ@V_GS=10V
**Maximum drain current (I_D)**: 4.4A
**Technology**: Trench technology
SiHF614-VB is a high-performance single N-type MOSFET in TO220 package, suitable for medium voltage applications. The device can operate at a drain voltage of 250V, provide a maximum drain current of 4.4A, have a low on-resistance (1100mΩ@V_GS=10V), and optimize its switching performance through Trench technology. It is widely used in power management, power tools, LED drivers, inverters and other fields, and can effectively improve power conversion efficiency and reduce power loss.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
250V |
|
3V |
4.4A |
|
|
1100mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
250V |
|
3V |
4.4A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
250V |
|
3V |
4.4A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
1. **Package type**: TO220
- The TO220 package is suitable for medium and high power applications that require good heat dissipation. It can effectively dissipate heat, allowing the MOSFET to operate stably under high loads, and is particularly suitable for systems that require higher power handling.
2. **Configuration**: Single-N-Channel
- As a single N-type MOSFET, the SiHF614-VB has a low on-resistance in current conduction, allowing it to switch efficiently and is suitable for most power switching applications.
3. **Maximum drain voltage (V_DS)**: 250V
- The maximum drain voltage of the SiHF614-VB is 250V, which is suitable for medium voltage power modules and switching power supply systems. It can withstand a voltage of 250V and provide stable working performance.
4. **Gate-Source Voltage (V_GS)**: ±20V
- This MOSFET supports a gate-source voltage of ±20V, ensuring that it can be switched on and off by a standard gate drive signal, suitable for most common gate drive circuits.
5. **Threshold Voltage (V_th)**: 3V
- The threshold voltage of SiHF614-VB is 3V, which means that when the gate-source voltage reaches 3V, the MOSFET will start to turn on, suitable for applications that require low switching voltage.
6. **On-Resistance (R_DS(on))**: 1100mΩ@V_GS=10V
- At V_GS=10V, the on-resistance is 1100mΩ, providing lower power loss. Although its on-resistance is slightly higher than some high-efficiency MOSFETs, it can still meet the needs of most medium-power applications.
7. **Maximum drain current (I_D)**: 4.4A
- SiHF614-VB can handle a maximum drain current of 4.4A, suitable for applications with medium current requirements, providing stable current conduction and control.
8. **Technology**: Trench technology
- SiHF614-VB uses Trench technology, which has lower on-resistance and higher switching efficiency. Trench technology can help reduce power loss in the on-state, optimize switching speed, and improve the overall performance of MOSFET.
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Domain and module applications：
Applications and module examples
1. **Power management and power conversion systems**
- SiHF614-VB is particularly suitable for power management systems such as DC-DC converters, AC-DC adapters, and switching power supplies (SMPS). Its high voltage withstand capability (250V) and medium current handling capability make it an ideal choice for medium voltage power modules, which can efficiently achieve voltage conversion and energy management.
2. **Power tools and home appliances**
- In power tools (such as electric screwdrivers, electric drills) and some home appliances (such as vacuum cleaners, microwave ovens, etc.), SiHF614-VB can be used as a power switch to efficiently control the flow of current. Its 4.4A drain current handling capability is sufficient to meet the power control needs in these appliances.
3. **LED driver power**
- SiHF614-VB can be used in driver power modules in LED lighting systems, especially in LED driver circuits that require high efficiency. Its high current carrying capacity and low on-resistance enable it to effectively control the current and voltage of the LED, extend the service life of the LED and improve overall energy utilization.
4. **Inverter and Uninterruptible Power Supply (UPS)**
- In inverter and UPS systems, SiHF614-VB can be used as a current switch for battery to AC power conversion, suitable for medium voltage inverter systems. It can effectively handle current conversion and battery management to ensure stable system operation, especially suitable for small inverter and UPS applications.
5. **Communication Equipment Power Management**
- In communication equipment (such as base station power supply, satellite communication equipment, etc.), SiHF614-VB can be used as a power switch in the power management module, responsible for the stable conversion of current and voltage. Its high voltage tolerance and low on-resistance can help improve the stability and efficiency of the power supply of communication equipment.
6. **Battery Management System (BMS)**
- In the battery management system, SiHF614-VB can be used for battery charging and discharging control, especially for electric vehicles, power tools and other equipment that require efficient battery management. Its high voltage tolerance and medium current handling capability enable it to meet the current conversion requirements in battery management systems.
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As an efficient medium power MOSFET, SiHF614-VB is suitable for various medium voltage applications such as power conversion, drive, inverter and battery management with its 250V drain voltage, 4.4A drain current and Trench technology. By reducing power loss and improving switching efficiency, it provides a stable and efficient solution for power modules and drive systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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