Product introduction：
Product Introduction
**Model**: SIHF18N50C-E3-VB
**Package**: TO220
**Configuration**: Single N-channel
**Maximum drain voltage (V_DS)**: 650V
**Gate-source voltage (V_GS)**: ±30V
**Threshold voltage (V_th)**: 3.5V
**On-resistance (R_DS(on))**: 160mΩ@V_GS=10V
**Maximum drain current (I_D)**: 20A
**Technology**: SJ_Multi-EPI technology
**Overview**: SIHF18N50C-E3-VB is a high-voltage, low on-resistance single N-type MOSFET, packaged in TO220, using advanced SJ_Multi-EPI technology. The device has a maximum drain voltage capability of 650V and a maximum drain current of 20A, and is suitable for high voltage and high current power management and switching applications. Its on-resistance is 160mΩ at V_GS=10V, with low switching losses and excellent reliability in high voltage environments. It is widely used in industrial power supplies, inverters, switch mode power supplies (SMPS) and other fields.
---
File download
Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
20A |
|
|
160mΩ |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
1. **Package type**: TO220
- TO220 package is a common package for power MOSFET, suitable for applications that require high power heat dissipation. This package has good thermal conductivity and can support higher current and power requirements, suitable for high power fields such as industrial power supplies, DC-DC converters and motor drives.
2. **Configuration**: Single-N-Channel
- As an N-channel MOSFET, this device provides lower on-resistance and higher switching efficiency, especially suitable for occasions that require efficient current switching. N-type MOSFETs usually exhibit lower R_DS(on), so they are often preferred in high power applications.
3. **Maximum drain voltage (V_DS)**: 650V
- SIHF18N50C-E3-VB can withstand a drain voltage of up to 650V, making it suitable for high voltage power systems. Whether it is a battery-powered device or high-power power management, this MOSFET can work stably to ensure the safety and reliability of the system.
4. **Gate-Source Voltage (V_GS)**: ±30V
- Supporting gate-source voltage of ±30V provides greater flexibility for the control circuit to adapt to common drive voltages. At the same time, the high gate voltage range ensures that the MOSFET is fully controlled during the switching process.
5. **Threshold Voltage (V_th)**: 3.5V
- The threshold voltage of this MOSFET is 3.5V, which means that it starts to conduct when the gate-source voltage is greater than 3.5V. This value is suitable for high-voltage switching applications and ensures that the MOSFET can switch stably during operation.
6. **On-resistance (R_DS(on))**: 160mΩ@V_GS=10V
- At V_GS=10V, the on-resistance of SIHF18N50C-E3-VB is 160mΩ. Although slightly higher than some low on-resistance MOSFETs, this on-resistance still provides sufficient efficiency in high-voltage applications of 650V, especially when large power handling is required, which can significantly reduce power losses.
7. **Maximum drain current (I_D)**: 20A
- With a maximum drain current of 20A, the device can withstand large current loads and is very suitable for power conversion tasks in high-power power supplies, inverters, and other industrial applications.
8. **Technology**: SJ_Multi-EPI technology
- Using SJ_Multi-EPI technology, this technology optimizes the electrical performance and thermal management capabilities of the MOSFET. It helps to reduce on-resistance, increase switching speed, and increase voltage resistance, thereby enhancing the reliability of MOSFET in complex and high-load environments.
---
Domain and module applications：
Applications and module examples
1. **High-voltage power management**:
- SIHF18N50C-E3-VB is ideal for high-voltage power management systems, especially in power conversion and current control that require high current and high withstand voltage. The high withstand voltage and low on-resistance of this MOSFET make it an ideal choice for power management and high-power applications, ensuring efficient and stable operation of the power system.
2. **Inverter**:
- In the inverter system, SIHF18N50C-E3-VB can be used to convert DC to AC, and is widely used in renewable energy systems such as solar inverters and wind power inverters. Its maximum drain voltage of 650V and high current handling capability enable it to work stably in a high-voltage DC power supply environment and provide reliable power conversion.
3. **Switch Mode Power Supply (SMPS)**:
- SIHF18N50C-E3-VB is suitable for use as a switching element in a switch mode power supply (SMPS). Due to its high withstand voltage and low on-resistance, it can play an important role in high-voltage power conversion and load regulation. Common applications include DC-DC converters, AC-DC power adapters, UPS systems, etc.
4. **Motor drive and control system**:
- In motor drive and control systems, especially in high-power DC motor drive systems, SIHF18N50C-E3-VB can be used as a power switch. It can withstand large currents and provide efficient switching conversion to ensure the smooth operation of the motor drive system.
5. **Battery Management System (BMS)**:
- Battery Management System (BMS) requires efficient switching devices to regulate the battery charging and discharging process. The high current handling capability and low on-resistance of SIHF18N50C-E3-VB make it an ideal choice in battery management systems, providing efficient battery charging and discharging control.
6. **Electric Vehicles (EV) and Charging Stations**:
- In the power management systems of electric vehicles (EVs) and EV charging stations, SIHF18N50C-E3-VB can be used as a high-voltage power switch to handle high-voltage and high-current power conversion. It can effectively manage the charging process and improve the charging efficiency and safety of electric vehicle batteries.
7. **Industrial Control and Automation Systems**:
- In industrial control systems, SIHF18N50C-E3-VB is suitable for power management of high-voltage power supplies, variable frequency drives, and automation equipment. Its high voltage and high current capabilities enable it to provide efficient power switching and power regulation in a variety of industrial equipment.
---
SIHF18N50C-E3-VB has demonstrated excellent performance in a variety of applications such as high voltage power management, inverters, switch mode power supplies, etc., with its high withstand voltage of 650V, on-resistance of 160mΩ and drain current of up to 20A. It is particularly suitable for high-power power supply systems and industrial power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
