Product introduction：
Product Introduction
**Model**: SiA519EDJ-T1-GE3-VB
**Package**: DFN6(2x2)-B
**Configuration**: Dual-N+P-Channel
**Maximum Drain Voltage (V_DS)**: ±30V
**Gate-Source Voltage (V_GS)**: ±20V
**Threshold Voltage (V_th)**: 1.6V / -1.7V
**On-resistance (R_DS(on))**:
- N-channel: 24mΩ@V_GS=4.5V
- P-channel: 40mΩ@V_GS=4.5V
- N-channel: 18mΩ@V_GS=10V
- P-channel: 32mΩ@V_GS=10V
**Maximum drain current (I_D)**: ±7A
**Technology**: Trench technology
**Overview**: SiA519EDJ-T1-GE3-VB is a dual MOSFET in a DFN6 (2x2)-B package, including an N-type channel and a P-type channel. Its maximum drain voltage is ±30V, and it can operate over a wide voltage range, making it suitable for a variety of medium and low voltage power control and load switching applications. This model uses Trench technology and has a low on-resistance (R_DS(on)), which can significantly reduce power loss and improve system efficiency. The maximum drain current is ±7A, making it suitable for medium power load switches and power management systems. Due to its small package and efficient performance, the SiA519EDJ-T1-GE3-VB is ideal for use in space-constrained applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN6(2X2)-B |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±7A |
|
|
18/32mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN6(2X2)-B |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN6(2X2)-B |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±7A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN6(2X2)-B |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±7A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN6(2X2)-B |
Dual-N+P |
|
|
|
|
|
|
|
Detailed parameter description
1. **Package type**: DFN6(2x2)-B
- This package adopts a pinless design (DFN package), which has a smaller footprint and good thermal performance. The compact size of 2x2mm makes it particularly suitable for space-constrained applications, and can provide good heat dissipation efficiency, suitable for application scenarios with high performance requirements.
2. **Configuration**: Dual N-type and P-type channels (Dual-N+P-Channel)
- SiA519EDJ-T1-GE3-VB integrates an N-type MOSFET and a P-type MOSFET, which can handle positive and negative currents on the same chip, suitable for power management and load switching applications. This configuration can achieve more efficient current control and simplify circuit design, especially for inverters, power management, load control and other occasions.
3. **Maximum drain voltage (V_DS)**: ±30V
- The device supports a maximum drain voltage of ±30V, enabling it to operate stably in low to medium voltage applications, suitable for power management, load switching, inverters and other applications.
4. **Gate-source voltage (V_GS)**: ±20V
- Supports a gate-source voltage of ±20V, suitable for the control requirements of most power circuits, and can operate stably at higher voltages.
5. **Threshold voltage (V_th)**: 1.6V / -1.7V
- The MOSFET has a low threshold voltage (N-type: 1.6V, P-type: -1.7V), enabling fast response at lower gate-source voltages. For low voltage operation applications, the lower threshold voltage helps improve switching speed and circuit response efficiency.
6. **On-resistance (R_DS(on)）**:
- **N-type channel**:
- 24mΩ@V_GS=4.5V
- 18mΩ@V_GS=10V
- **P-type channel**:
- 40mΩ@V_GS=4.5V
- 32mΩ@V_GS=10V
- The low on-resistance enables the SiA519EDJ-T1-GE3-VB to have lower power loss during operation, thereby improving the energy efficiency of the system. It is especially suitable for power modules and load control circuits that require frequent switching.
7. **Maximum drain current (I_D)**: ±7A
- SiA519EDJ-T1-GE3-VB supports a maximum drain current of ±7A, which can meet the needs of medium-power applications and is suitable for modules such as battery power supply, load switching, and power management.
8. **Technology**: Trench technology
- Manufactured using Trench technology, it provides higher conduction performance and lower on-resistance, while optimizing switching speed and thermal performance. The Trench process can effectively reduce power loss during switching and improve the overall efficiency of the system.
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Domain and module applications：
Applications and module examples
1. **DC-DC converter**:
- SiA519EDJ-T1-GE3-VB is suitable for DC-DC converters, especially in scenarios where positive and negative current control is required. Due to its low on-resistance and lower power loss, it can improve power conversion efficiency, especially in applications with high-frequency switching, such as portable devices, power tools and other battery-driven devices.
2. **Battery Management System (BMS)**:
- In the battery management system, SiA519EDJ-T1-GE3-VB can be used for battery charge and discharge management. It enables precise control and switching of battery current, optimizes battery efficiency and extends battery life.
3. **Power switch and load control**:
- SiA519EDJ-T1-GE3-VB can be used in low-voltage load switching circuits to reduce switching losses and improve system efficiency through low on-resistance. It is particularly suitable for modules that require efficient power management, such as consumer electronics, power distribution units, and communication equipment.
4. **Inverter Applications**:
- In small inverters, SiA519EDJ-T1-GE3-VB can efficiently handle positive and negative currents, ensuring low power loss during the inverter process. It is suitable for scenarios that require bipolar current conversion, such as solar inverters, power tool drives, and mobile energy storage.
5. **Smart Hardware and Appliance Control**:
- In the field of smart hardware and appliance control, SiA519EDJ-T1-GE3-VB can be used for applications such as load switching, power management, and current control. Its low on-resistance and fast response make it perform well in smart homes, IoT devices, and other fields, especially in devices that require high performance and miniaturization.
6. **Automotive Electronics**:
- In automotive electronics, SiA519EDJ-T1-GE3-VB can be used for battery management, battery charging management, battery protection, and energy conversion systems in electric vehicles. The configuration of dual N+P channels enables it to handle complex electrical control requirements such as inverters and energy recovery systems.
7. **Power tool and robot control**:
- SiA519EDJ-T1-GE3-VB is also suitable for power tool and robot systems as a switching element in power management and motor control circuits. Its efficient switching performance can effectively improve the energy efficiency of power tools and robot systems, extend working time and reduce heat loss.
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In short, SiA519EDJ-T1-GE3-VB is a dual MOSFET with excellent switching performance and low power loss, suitable for various low and medium power applications such as power management, battery control, load switching and inverters. Due to its low on-resistance, compact packaging and efficient Trench technology, it is particularly suitable for use in modern electronic equipment and automotive electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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