Product introduction：
Model: SI9405DY-T1-E3-VB
Package: SOP8
Configuration: Unipolar P-channel MOSFET
Maximum drain voltage (V_DS): -20V
Gate-source voltage (V_GS): ±20V
Threshold voltage (V_th): -0.6V
On-resistance (R_DS(on)):
21mΩ@V_GS=2.5V
15mΩ@V_GS=4.5V
Maximum drain current (I_D): -13A
Technology: Trench technology
Overview: SI9405DY-T1-E3-VB is a high-performance P-channel MOSFET in SOP8 package. This MOSFET has a low on-resistance and is suitable for low-voltage, high-efficiency power management, switching power supplies, power tools, battery-powered systems and other applications. Its maximum drain voltage is -20V and maximum drain current is -13A, which can meet the requirements of high power density and high efficiency. The threshold voltage of this MOSFET is -0.6V, and it has fast switching characteristics, making it suitable for power converters, DC-DC converters, load switches, etc.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-P |
-20V |
|
-0.6V |
-13A |
21mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-P |
-20V |
|
-0.6V |
-13A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-P |
-20V |
|
-0.6V |
-13A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-P |
|
|
|
|
|
|
|
Package type: SOP8 (Small Outline Package, 8-pin package)
Small package helps to reduce the overall circuit size.
Suitable for use in space-constrained applications.
Configuration: Unipolar P-channel
The type of MOSFET is P-channel, suitable for high-side switching of loads.
Maximum drain voltage (V_DS): -20V
The maximum withstand voltage is -20V, suitable for use in power management and switching circuits with lower voltages.
Gate-source voltage (V_GS): ±20V
The gate-source voltage can withstand changes of ±20V, providing sufficient gate drive voltage to switch the MOSFET.
Threshold voltage (V_th): -0.6V
The turn-on voltage of the MOSFET is -0.6V, which means that the MOSFET will only turn on when the gate-source voltage is lower than the threshold.
On-resistance (R_DS(on)):
21mΩ @ V_GS=2.5V
15mΩ @ V_GS=4.5V
Maintains low on-resistance at low gate-source voltage, reduces power loss and improves system efficiency.
Maximum drain current (I_D): -13A
The maximum allowable drain current is -13A, which is suitable for power circuits that need to carry larger currents.
Technology: Trench technology
Manufactured using Trench process, provides lower on-resistance, improves switching efficiency and thermal management performance.
Domain and module applications：
Examples
Power Management and DC-DC Converters:
The low R_DS(on) characteristics of the SI9405DY-T1-E3-VB make it suitable for high-efficiency power management applications. For example, in a DC-DC converter, it can be used as a high-side switching MOSFET to achieve efficient voltage conversion, reduce energy loss, and improve the overall efficiency of the power supply.
Load Switch Circuit:
As a P-channel MOSFET, it can provide reliable control in high-side switching applications. Its low on-resistance and high maximum leakage current make it suitable for battery management systems and load switching circuits. It can efficiently control current in low-voltage environments and extend the working time of the equipment.
Power Tools:
In the battery management and motor control system of power tools, the SI9405DY-T1-E3-VB can be used as a switching element to control the switching of the internal power supply of the power tool to ensure the high efficiency of the power tool. It can withstand high current loads and can reduce power losses due to its low R_DS(on) value.
High-efficiency switching power supply:
In a switching power supply (SMPS), the low on-resistance and high current carrying capacity of MOSFET make it an ideal choice. During the conversion process from AC to DC, it helps to increase the switching frequency, reduce the volume and power loss of the power system, and thus improve the overall efficiency.
Consumer electronics:
SI9405DY-T1-E3-VB has a wide range of applications in consumer electronics such as mobile phone chargers, battery charging stations, and portable battery-powered devices. Its efficient switching characteristics ensure that these devices can operate efficiently for a longer period of time while maintaining low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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