Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-P+P |
-30V |
|
-2.5V |
-12A |
|
|
11mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-P+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-P+P |
-30V |
|
-2.5V |
-12A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-P+P |
-30V |
|
-2.5V |
-12A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-P+P |
|
|
|
|
|
|
|
SI7945DP-T1-E3-VB Detailed parameter description
- **Package type**: SOP8
- **Configuration**: Dual-P channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- **13mΩ** (VGS=4.5V)
- **11mΩ** (VGS=10V)
- **Maximum drain current (ID)**: -12A
- **Technology**: Trench technology
Domain and module applications:
Application fields and module examples
1. **Battery Management System (BMS)**
In **Battery Management System** (BMS), the low on-resistance and high current carrying capacity of SI7945DP-T1-E3-VB make it an ideal choice. This MOSFET is used in the battery protection circuit to effectively manage the battery charging and discharging process, provide a stable current path, reduce power loss and heat generation, and is particularly suitable for **Electric Vehicles (EV)** and **Portable Electronic Devices**.
2. **Power Tool and Home Appliance Power Management**
This MOSFET is also widely used in **Power Tool** and **Home Appliance Power Management System**. In power tools such as electric drills, cordless vacuum cleaners, electric screwdrivers and other equipment, SI7945DP-T1-E3-VB can be used for battery management, power control and current switching. Its low on-resistance ensures efficient power transmission and long-term working efficiency, reducing the burden on the battery and extending the battery life.
3. **DC-DC Converter and Power Amplifier**
In **DC-DC Converter** and **Power Amplifier** applications, SI7945DP-T1-E3-VB can be used as an efficient switching element in voltage conversion and power amplification. Its low RDS(ON) effectively suppresses energy loss and heat generation during the conversion process, and is suitable for occasions requiring high-efficiency power modules, especially in power systems in **communication equipment** and **data centers**.
4. **Load Switch and Efficient Power Management**
SI7945DP-T1-E3-VB is suitable for **load switch** applications, and performs well in switching power supplies, battery management, power distribution and other fields. As a dual P-channel MOSFET, it can accurately control the current flow and the opening and closing of the power switch, while reducing energy loss and heat generation in the system. It is widely used in smart homes, industrial automation and IoT devices.
5. **Automotive Electronic Systems**
In **Automotive Electronic Systems**, SI7945DP-T1-E3-VB is suitable for battery management systems, energy distribution modules, and power control modules. Especially in **Electric Vehicles (EVs)**, this MOSFET can be used in modules such as battery charging, power conversion, and motor drive. Due to its efficient current control characteristics, it helps reduce power losses within the system and improves the energy efficiency and performance of the entire vehicle.
6. **Industrial Automation and Energy Systems**
In **Industrial Automation** and **Energy Systems**, SI7945DP-T1-E3-VB is used for power management and load switching applications. Due to its extremely low on-resistance and high current carrying capacity, it can efficiently perform power switching and energy transmission in industrial equipment, and is widely used in power distribution systems, intelligent control systems, and their load switching modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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