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SI7909DN-T1-GE3-VB Product details

Product introduction:

1. Product Introduction

**SI7909DN-T1-GE3-VB** is a high-performance **P-Channel MOSFET** in **DFN8(3x3)** package, designed for low-voltage switching and high-efficiency power management applications. This MOSFET has a low on-resistance (R_DS(on)) and high current carrying capacity (maximum 25A), which enables it to exhibit excellent performance in high-current applications. Its maximum drain-source voltage is **-12V**, which is suitable for high-efficiency power control in low-voltage environments. Based on **Trench technology**, this MOSFET provides fast switching performance and extremely low on-resistance, making it an ideal switching element in various power management modules.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-P -12V -0.8V -25A 21mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-P -12V -0.8V -25A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-P -12V -0.8V -25A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-P
2. Detailed parameter description

- **Model**: SI7909DN-T1-GE3-VB
- **Package**: DFN8(3x3)
- **Configuration**: Unipolar P-Channel
- **Drain-source voltage (V_DS)**: -12V
- **Gate-source voltage (V_GS)**: ±8V
- **Threshold voltage (V_th)**: -0.8V
- **On-resistance (R_DS(on))**:
- 21mΩ @ V_GS = 2.5V
- 15mΩ @ V_GS = 4.5V
- **Maximum leakage current (I_D)**: -25A
- **Technology**: Trench technology

Domain and module applications:

3. Application fields and module examples

**1. Battery Management System (BMS)**
- **Application scenario**: SI7909DN-T1-GE3-VB is widely used in battery management systems due to its low on-resistance and high current carrying capacity. It is used for battery charging and discharging control to ensure that the battery operates within a safe current range.
- **Example**: In the battery management system (BMS) of power tools or electric vehicles, as a switching element in the battery charging and discharging process, it optimizes the battery charging and discharging efficiency, and reduces power loss through its low on-resistance, thereby improving the overall efficiency of the battery system.

**2. DC-DC Converter**
- **Application scenario**: This MOSFET is used as a switching element in a DC-DC buck converter to efficiently convert the input voltage to the required output voltage, reduce energy loss, and provide efficient current conversion.
- **Example**: In mobile devices, smart hardware or portable power supplies, SI7909DN-T1-GE3-VB reduces the battery voltage to a suitable operating voltage for various subsystems (such as sensors, wireless communication modules) through efficient conversion.

**3. Electric Vehicle (EV) Power Management System**
- **Application Scenario**: In electric vehicle systems, this MOSFET can be used in battery management systems, inverters or motor drive systems to optimize power conversion and ensure system stability and low power consumption under high current loads.
- **Example**: In electric vehicles, SI7909DN-T1-GE3-VB can be used as a switching element in the battery pack to accurately control the charging and discharging of the battery, improve the battery efficiency and the overall performance of the system.

**4. Low-voltage power supply**
- **Application Scenario**: In low-voltage power supply systems, SI7909DN-T1-GE3-VB provides a reliable current switching solution, especially for small power modules that require precise current control.
- **Example**: In applications such as mobile communication devices, embedded systems, and laptop battery management, SI7909DN-T1-GE3-VB can efficiently manage battery current and ensure long battery life and stable operation of the system through low on-resistance.

**5. LED driver power supply**
- **Application scenario**: When used in LED driver power supply, SI7909DN-T1-GE3-VB can stably drive LED modules with high efficiency and low loss, ensuring the stability and energy efficiency of LED light sources.
- **Example**: In commercial lighting or high-brightness LED displays, SI7909DN-T1-GE3-VB can be used as a switching element to accurately adjust current, reduce power loss and improve the efficiency of the light source.

**6. Intelligent power module**
- **Application scenario**: This MOSFET can also be used for switch control in intelligent power modules to optimize power conversion and load management of power supplies.
- **Example**: In smart home devices or Internet of Things (IoT) modules, the SI7909DN-T1-GE3-VB acts as a switching element in the power module, providing efficient power management and battery optimization, ensuring efficient operation of the device and extending battery life.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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