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SI7904BDN-VB Product details

Product introduction:

**SI7904BDN-VB MOSFET Product Introduction**

SI7904BDN-VB is a dual N-channel MOSFET using Trench technology, packaged in DFN8 (3x3), designed for low-voltage, high-efficiency applications. The maximum drain-source voltage (VDS) of this MOSFET is 20V, which is suitable for low-voltage power management, switch-mode power supply (SMPS) and load switch applications. Its gate-source voltage (VGS) is up to ±20V, and the gate threshold voltage (Vth) ranges from 0.5V to 1.5V, which can achieve efficient switching operation under low-voltage drive. The on-resistance (RDS(ON)) of SI7904BDN-VB is very low, at 12mΩ (VGS=4.5V) and 10mΩ (VGS=10V), which greatly reduces the conduction loss and is suitable for scenarios requiring high current efficiency. The maximum drain current (ID) can reach 9.4A, enabling it to work stably under high load conditions.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Dual-N 20V 0.5~1.5V 9.4A 10mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Dual-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Dual-N 20V 0.5~1.5V 9.4A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Dual-N 20V 0.5~1.5V 9.4A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Dual-N
**SI7904BDN-VB MOSFET detailed parameter description**

- **Model**: SI7904BDN-VB
- **Package**: DFN8 (3x3)
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 9.4A
- **Technology**: Trench
- **Maximum power dissipation**: 2.5W (depending on operating conditions and heat dissipation capabilities)
- **Input capacitance (Ciss)**: 1000pF (typical)
- **Output capacitance (Coss)**: 500pF (typical)
- **Reverse transfer capacitance (Crss)**: 100pF (typical)
- **Operating temperature range**: -55°C to +150°C
- **Total gate charge (Qg)**: 15nC (typical)

Due to its low on-resistance and high current carrying capability, SI7904BDN-VB is particularly suitable for high-efficiency power management and switching applications, and is widely used in various low-voltage, high-power density electronic devices.

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Domain and module applications:

**SI7904BDN-VB MOSFET application areas and module examples**

1. **Low-voltage power converter**
SI7904BDN-VB performs well in low-voltage DC-DC converters, especially in power management systems with 5V or 12V output. Its low on-resistance (10mΩ) and high current carrying capacity (9.4A) can effectively reduce power loss and improve power efficiency. This makes it an ideal choice for high-efficiency power modules, chargers, and low-power devices.

2. **Power management and load switching**
In power management systems, SI7904BDN-VB acts as a load switch, providing efficient switching between low-voltage power supplies and loads. Its low RDS(ON) characteristics can minimize switching losses and heat, and is suitable for portable devices, battery-powered devices, and small power modules.

3. **High-efficiency switch mode power supply (SMPS)**
In the design of high-efficiency switch mode power supply (SMPS), SI7904BDN-VB can work as the main switching device and is widely used in battery management, portable device power supply, and small power adapters. Its ultra-low on-resistance and high current handling capability can ensure that the system maintains high efficiency even under high load, and is particularly suitable for high-frequency switching and voltage conversion applications.

4. **Battery Management System (BMS)**
In the battery management system (BMS), SI7904BDN-VB can be used to control the battery charging and discharging process. Its low RDS(ON) and high current capability enable it to perform well in controlling battery current, ensuring that the system can operate stably even under large load currents, and improving the efficiency and safety of the battery system.

5. **Portable devices and consumer electronics**
In portable consumer electronics such as smartphones, tablets, and wearable devices, the SI7904BDN-VB is often used in power management modules, especially in low-voltage systems such as 5V power supplies and 3.3V power modules. The small size of the MOSFET package (DFN8 3x3) makes it very suitable for portable devices with space constraints.

6. **Power tools and home appliances**
SI7904BDN-VB is also widely used in power tools and home appliances, especially in applications requiring high-power switching, which can quickly and effectively switch large currents to ensure stable operation of the equipment. Its low on-resistance can reduce power loss and maintain low heat output under high current and high-frequency switching.

7. **Sensors and industrial control systems**
In industrial sensors and automation control systems, the SI7904BDN-VB plays a vital role as a power switch in driving loads, controlling power supplies, and protecting circuits. Its fast switching characteristics and low power consumption make it particularly suitable for high-efficiency industrial power solutions and automation control modules.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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