Product introduction：
**
SI7900EDN-VB is a dual N-channel MOSFET in DFN8 (3X3) package, designed for low voltage, high efficiency power management and miniaturization applications. It has a maximum drain-source voltage of 20V, low on-resistance and high current carrying capacity, suitable for systems requiring high performance and low power consumption. The maximum drain current of this MOSFET is 9.4A, and it uses Trench technology to effectively reduce power loss and heat generation. It is widely used in load switches, DC-DC converters, and various low voltage and high efficiency power supply applications.
**
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Dual-N |
20V |
|
0.5~1.5V |
9.4A |
|
|
10mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3) |
Dual-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3) |
Dual-N |
20V |
|
0.5~1.5V |
9.4A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3) |
Dual-N |
20V |
|
0.5~1.5V |
9.4A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3) |
Dual-N |
|
|
|
|
|
|
|
**
- **Package**: DFN8 (3X3)
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 12mΩ@VGS=4.5V
- 10mΩ@VGS=10V
- **Maximum leakage current (ID)**: 9.4A
- **Technology type**: Trench
**
Domain and module applications：
Examples: SI7900EDN-VB is suitable for multiple low-voltage, high-efficiency power systems, especially in miniaturized devices and high-efficiency power management. First, in DC-DC converters, it can effectively improve power conversion efficiency and reduce power consumption due to its low on-resistance and high current carrying capacity. Especially in mobile devices, consumer electronics and embedded systems, this MOSFET can provide devices with longer battery life and lower energy loss. Secondly, in load switch applications, SI7900EDN-VB can be used as an efficient switching element, especially for power management and battery control in low-voltage systems. It can provide faster switching speeds and lower switching losses in load switches, suitable for smart homes, wireless communication devices and other low-power applications. In addition, this MOSFET is also suitable for motor drive modules, especially in the drive of brushless DC motors (BLDC), which can provide efficient and stable drive current in low-voltage and miniaturized power systems, and is widely used in robots, drones, and various portable power tools.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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