Product introduction:
**SI7886ADP-T1-GE3-VB MOSFET Product Introduction**
SI7886ADP-T1-GE3-VB is a unipolar N-channel MOSFET based on Trench technology, packaged in DFN8 (5x6) package, designed for high current, high power applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, the maximum drain current (ID) reaches 120A, and it supports a gate-source voltage of ±20V. It has a low gate threshold voltage (Vth) of 1.7V, which can achieve efficient switching under common driving voltages. It is particularly noteworthy that the on-resistance (RDS(ON)) of SI7886ADP-T1-GE3-VB is very low: 5mΩ at VGS = 4.5V and 3mΩ at VGS = 10V, which makes it excellent in high current applications such as efficient power conversion and battery management. Combining low switching losses and high current capability, SI7886ADP-T1-GE3-VB is widely used in power conversion, battery management, power tools, automotive electronics and other fields.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
**SI7886ADP-T1-GE3-VB MOSFET detailed parameter description**
- **Model**: SI7886ADP-T1-GE3-VB
- **Package**: DFN8 (5x6)
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 5mΩ @ VGS = 4.5V
- 3mΩ @ VGS = 10V
- **Drain current (ID)**: 120A
- **Technology**: Trench
- **Maximum power dissipation**: 200W (depending on operating conditions and heat dissipation capabilities)
- **Maximum gate charge (Qg)**: 50nC
- **Maximum drain charge (Qd)**: 200nC
- **Operating temperature range**: -55°C to +150°C
- **Input capacitance (Ciss)**: 2000pF (typical)
Due to its low on-resistance and high current carrying capability, the SI7886ADP-T1-GE3-VB is an ideal choice for high-efficiency power management, industrial power systems and high-power switching applications.
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Domain and module applications:
**SI7886ADP-T1-GE3-VB MOSFET Application Fields and Module Examples**
1. **High-efficiency power management system**
SI7886ADP-T1-GE3-VB is suitable for a variety of high-efficiency power conversion applications, such as DC-DC converters, power modules and battery chargers. Its low on-resistance (3mΩ @ VGS = 10V) and high current carrying capacity (120A) can significantly reduce power loss during power conversion and improve overall energy efficiency. It is especially suitable for high-power power supplies and equipment that requires efficient power transmission, such as communication power supplies, computer power supplies and industrial control power systems.
2. **Battery Management System (BMS)**
SI7886ADP-T1-GE3-VB plays a key role in battery management systems, especially in the charging and discharging management of electric vehicles (EVs), power tools and portable power devices. The low on-resistance and high current carrying capacity of this MOSFET can ensure efficient switching of battery charging and discharging paths, reduce energy loss, improve battery cycle life, and optimize the overall performance of the battery management system.
3. **Power tools and home appliances**
In power tools, home appliances, and other high-power consumer electronic devices, SI7886ADP-T1-GE3-VB provides fast load switching and efficient current control. Its ultra-low on-resistance reduces starting losses during the start-stop process of power tools, ensuring stable operation of the equipment under high loads. Therefore, this MOSFET is suitable for power management modules in power tools, electric bicycles, electric home appliances and other equipment.
4. **Electric vehicles (EV) and hybrid electric vehicles (HEV)**
In electric vehicles and hybrid electric vehicles, SI7886ADP-T1-GE3-VB can be used in battery management systems (BMS) and electric drive systems. Its high current handling capability and low on-resistance make this MOSFET particularly suitable for efficient battery charging and discharging management, as well as electric drive control systems, improving the range and energy efficiency of electric vehicles, and ensuring the safe and stable operation of on-board batteries.
5. **Power amplifier and RF applications**
In power amplifier and RF applications, SI7886ADP-T1-GE3-VB can efficiently transmit current and is suitable for RF amplifier designs that require low power consumption and high efficiency. The application of MOSFET in these high-frequency power amplifiers helps to reduce energy loss and improve the overall efficiency of the system, especially in power management and amplification modules in communication equipment.
6. **Adjustable power supply and load regulation module**
SI7886ADP-T1-GE3-VB is suitable for adjustable power supply systems and load regulation modules, especially in precision power supply and current regulation applications. Its low RDS(ON) and fast switching characteristics enable it to be used to control the power supply output current and achieve precise current distribution. It is widely used in efficient power systems, programmable power supplies and various load regulation applications to ensure efficient and stable operation of current management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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